High Minority-Carrier Lifetimes in GaAs Grown on Low-Defect-Density Ge/GeSi/Si Substrates

R. M. Sieg; J. A. Carlin; J. J. Boeckl; S. A. Ringel; M. T. Currie; S. M. Ting; T. A. Langdo; G. Taraschi; E. A. Fitzgerald; B. M. Keyes

doi:10.1063/1.122689

High Minority-Carrier Lifetimes in GaAs Grown on Low-Defect-Density Ge/GeSi/Si Substrates

R. M. Sieg, J. A. Carlin, J. J. Boeckl, S. A. Ringel, M. T. Currie, S. M. Ting, T. A. Langdo, G. Taraschi, E. A. Fitzgerald, B. M. Keyes

Materials, Chemical, and Computational Science Research Operations

Research output: Contribution to journal › Article › peer-review

78 Scopus Citations

Abstract

A high bulk minority-carrier lifetime in GaAs grown on Si-based substrates is demonstrated. This was achieved by utilizing a step-graded Ge/GeSi buffer (threading dislocation density 2×10⁶ cm^-2) grown on an offcut (001) Si wafer, coupled with monolayer-scale control of the GaAs nucleation to suppress antiphase domains. Bulk minority-carrier lifetimes (τ_p) were measured using room-temperature time-resolved photoluminescence applied to a series of Al_0.3Ga_0.7As/GaAs/Al_0.3Ga_0.7As double-heterojunction structures doped n=1.1×10¹⁷ cm^-3 with GaAs thicknesses of 0.5, 1.0, and 1.5 μm. A lifetime τ_p=7.7 ns was determined for GaAs grown on Si. The extracted interface recombination velocity of 3.9×10³ cm/s is comparable to recombination velocities found for Al_0.3Ga_0.7As/GaAs interfaces grown on both GaAs and Ge wafers, indicating that the crosshatch surface morphology characteristic of strain-relaxed Ge/GeSi surfaces does not impede the formation of high-electronic-quality interfaces. These results hold great promise for future integration of III-V minority-carrier devices with Si wafer technologies.

Original language	American English
Pages (from-to)	3111-3113
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	21
DOIs	https://doi.org/10.1063/1.122689 https://doi.org/10.1063/1.122689
State	Published - 1998

NREL Publication Number

NREL/JA-520-26203

Access to Document

Cite this

@article{a007c683c3624b959794b13d97add306,

title = "High Minority-Carrier Lifetimes in GaAs Grown on Low-Defect-Density Ge/GeSi/Si Substrates",

abstract = "A high bulk minority-carrier lifetime in GaAs grown on Si-based substrates is demonstrated. This was achieved by utilizing a step-graded Ge/GeSi buffer (threading dislocation density 2×106 cm-2) grown on an offcut (001) Si wafer, coupled with monolayer-scale control of the GaAs nucleation to suppress antiphase domains. Bulk minority-carrier lifetimes (τp) were measured using room-temperature time-resolved photoluminescence applied to a series of Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As double-heterojunction structures doped n=1.1×1017 cm-3 with GaAs thicknesses of 0.5, 1.0, and 1.5 μm. A lifetime τp=7.7 ns was determined for GaAs grown on Si. The extracted interface recombination velocity of 3.9×103 cm/s is comparable to recombination velocities found for Al0.3Ga0.7As/GaAs interfaces grown on both GaAs and Ge wafers, indicating that the crosshatch surface morphology characteristic of strain-relaxed Ge/GeSi surfaces does not impede the formation of high-electronic-quality interfaces. These results hold great promise for future integration of III-V minority-carrier devices with Si wafer technologies.",

author = "Sieg, {R. M.} and Carlin, {J. A.} and Boeckl, {J. J.} and Ringel, {S. A.} and Currie, {M. T.} and Ting, {S. M.} and Langdo, {T. A.} and G. Taraschi and Fitzgerald, {E. A.} and Keyes, {B. M.}",

year = "1998",

doi = "10.1063/1.122689",

language = "American English",

volume = "73",

pages = "3111--3113",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - High Minority-Carrier Lifetimes in GaAs Grown on Low-Defect-Density Ge/GeSi/Si Substrates

AU - Sieg, R. M.

AU - Carlin, J. A.

AU - Boeckl, J. J.

AU - Ringel, S. A.

AU - Currie, M. T.

AU - Ting, S. M.

AU - Langdo, T. A.

AU - Taraschi, G.

AU - Fitzgerald, E. A.

AU - Keyes, B. M.

PY - 1998

Y1 - 1998

N2 - A high bulk minority-carrier lifetime in GaAs grown on Si-based substrates is demonstrated. This was achieved by utilizing a step-graded Ge/GeSi buffer (threading dislocation density 2×106 cm-2) grown on an offcut (001) Si wafer, coupled with monolayer-scale control of the GaAs nucleation to suppress antiphase domains. Bulk minority-carrier lifetimes (τp) were measured using room-temperature time-resolved photoluminescence applied to a series of Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As double-heterojunction structures doped n=1.1×1017 cm-3 with GaAs thicknesses of 0.5, 1.0, and 1.5 μm. A lifetime τp=7.7 ns was determined for GaAs grown on Si. The extracted interface recombination velocity of 3.9×103 cm/s is comparable to recombination velocities found for Al0.3Ga0.7As/GaAs interfaces grown on both GaAs and Ge wafers, indicating that the crosshatch surface morphology characteristic of strain-relaxed Ge/GeSi surfaces does not impede the formation of high-electronic-quality interfaces. These results hold great promise for future integration of III-V minority-carrier devices with Si wafer technologies.

AB - A high bulk minority-carrier lifetime in GaAs grown on Si-based substrates is demonstrated. This was achieved by utilizing a step-graded Ge/GeSi buffer (threading dislocation density 2×106 cm-2) grown on an offcut (001) Si wafer, coupled with monolayer-scale control of the GaAs nucleation to suppress antiphase domains. Bulk minority-carrier lifetimes (τp) were measured using room-temperature time-resolved photoluminescence applied to a series of Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As double-heterojunction structures doped n=1.1×1017 cm-3 with GaAs thicknesses of 0.5, 1.0, and 1.5 μm. A lifetime τp=7.7 ns was determined for GaAs grown on Si. The extracted interface recombination velocity of 3.9×103 cm/s is comparable to recombination velocities found for Al0.3Ga0.7As/GaAs interfaces grown on both GaAs and Ge wafers, indicating that the crosshatch surface morphology characteristic of strain-relaxed Ge/GeSi surfaces does not impede the formation of high-electronic-quality interfaces. These results hold great promise for future integration of III-V minority-carrier devices with Si wafer technologies.

UR - http://www.scopus.com/inward/record.url?scp=0001392338&partnerID=8YFLogxK

U2 - 10.1063/1.122689

DO - 10.1063/1.122689

M3 - Article

AN - SCOPUS:0001392338

SN - 0003-6951

VL - 73

SP - 3111

EP - 3113

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

High Minority-Carrier Lifetimes in GaAs Grown on Low-Defect-Density Ge/GeSi/Si Substrates

Abstract

NREL Publication Number

Access to Document

Other files and links

Fingerprint

Cite this