High Mobility Cd3As2(112) on GaAs(001) Substrates Grown via Molecular Beam Epitaxy

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Abstract

The three-dimensional Dirac semimetal Cd3As2 exhibits ultrahigh electron mobilities that are attractive for optoelectronic devices. However, its strong propensity to grow in the (112) orientation limits the feasibility to epitaxially integrate it into semiconductor structures that are conventionally grown in the (001) orientation. Here, we demonstrate a route to epitaxially growing high mobility Cd3As2(112) layers on GaAs(001) substrates, opening up possibilities for device design. The (001) crystallographic orientation of the GaAs substrate is switched to the (111) orientation through a strain-driven process at a CdTe/GaAs interface, resulting in a CdTe(111) buffer layer on top of which Cd3As2 can be grown. Although the CdTe(111) buffer layer templates Cd3As2 in the (112) orientation, it is not sufficient for producing Cd3As2 with high electron mobility. We therefore demonstrate additional buffer layer design principles for realizing Cd3As2(112) epilayers with similar electron mobilities to those grown on lattice-mismatched III-V (111) substrates. Finally, we outline a pathway to use this approach to grow Cd3As2(112) epilayers on Si(001) substrates, further expanding the potential to integrate Cd3As2 into electronic devices.

Original languageAmerican English
Pages (from-to)729-734
Number of pages6
JournalACS Applied Electronic Materials
Volume4
Issue number2
DOIs
StatePublished - 22 Feb 2022

Bibliographical note

Publisher Copyright:
© 2022 The Authors. Published by American Chemical Society

NREL Publication Number

  • NREL/JA-5K00-81743

Keywords

  • Cd3As2
  • Dirac semi-metals
  • epitaxy
  • heterostructures
  • molecular beam epitaxy
  • thin films
  • topological quantum materials
  • topological semi-metals
  • transmission electron microscopy

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