High-Mobility Molybdenum Doped Indium Oxide

M. F.A.M. Van Hest; M. S. Dabney; J. D. Perkins; D. S. Ginley

doi:10.1016/j.tsf.2005.08.314

High-Mobility Molybdenum Doped Indium Oxide

M. F.A.M. Van Hest, M. S. Dabney, J. D. Perkins, D. S. Ginley

Materials, Chemical, and Computational Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

64 Scopus Citations

Abstract

The effects of molybdenum doping (0-12 at.%) on the optical and electrical properties of In₂O₃ were investigated using combinatorial sputter deposition in combination with combinatorial analysis techniques. The electrical properties are highly dependent on the deposition temperature and the molybdenum doping concentration. A minimum temperature between 300 °C and 400 °C is needed to activate the carriers. The maximum mobility is observed at a Mo concentration of 4.4 at.% and is 65.3 cm² V^{- 1} s^{- 1}. The maximum conductivity is observed at 5.9 at.% molybdenum doping and is equal to 5000 Ω^{- 1} cm^{- 1}. The carrier concentration increases with increasing molybdenum doping to a maximum value of 6.6•10²⁰ cm^{- 3} at a doping concentration of 8.6 at.%. The optical transparency is high (> 80%) in a wide spectral range that is dependent on the process parameters.

Original language	American English
Pages (from-to)	70-74
Number of pages	5
Journal	Thin Solid Films
Volume	496
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2005.08.314 https://doi.org/10.1016/j.tsf.2005.08.314
State	Published - 2006
Event	Proceedings of the Fourth International Symposium on Transparent Oxide Thin Film for Electronics and Optics (TOEO-4) - Duration: 7 Apr 2005 → 8 Apr 2005

NREL Publication Number

NREL/JA-520-38058

Keywords

Combinatorial science
Indium oxide (206)
Physical vapour deposition (370)
Transparent conductive oxide

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title = "High-Mobility Molybdenum Doped Indium Oxide",

abstract = "The effects of molybdenum doping (0-12 at.%) on the optical and electrical properties of In2O3 were investigated using combinatorial sputter deposition in combination with combinatorial analysis techniques. The electrical properties are highly dependent on the deposition temperature and the molybdenum doping concentration. A minimum temperature between 300 °C and 400 °C is needed to activate the carriers. The maximum mobility is observed at a Mo concentration of 4.4 at.% and is 65.3 cm2 V- 1 s- 1. The maximum conductivity is observed at 5.9 at.% molybdenum doping and is equal to 5000 Ω- 1 cm- 1. The carrier concentration increases with increasing molybdenum doping to a maximum value of 6.6•1020 cm- 3 at a doping concentration of 8.6 at.%. The optical transparency is high (> 80%) in a wide spectral range that is dependent on the process parameters.",

keywords = "Combinatorial science, Indium oxide (206), Physical vapour deposition (370), Transparent conductive oxide",

author = "{Van Hest}, {M. F.A.M.} and Dabney, {M. S.} and Perkins, {J. D.} and Ginley, {D. S.}",

year = "2006",

doi = "10.1016/j.tsf.2005.08.314",

language = "American English",

volume = "496",

pages = "70--74",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1",

note = "Proceedings of the Fourth International Symposium on Transparent Oxide Thin Film for Electronics and Optics (TOEO-4) ; Conference date: 07-04-2005 Through 08-04-2005",

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T1 - High-Mobility Molybdenum Doped Indium Oxide

AU - Van Hest, M. F.A.M.

AU - Dabney, M. S.

AU - Perkins, J. D.

AU - Ginley, D. S.

PY - 2006

Y1 - 2006

N2 - The effects of molybdenum doping (0-12 at.%) on the optical and electrical properties of In2O3 were investigated using combinatorial sputter deposition in combination with combinatorial analysis techniques. The electrical properties are highly dependent on the deposition temperature and the molybdenum doping concentration. A minimum temperature between 300 °C and 400 °C is needed to activate the carriers. The maximum mobility is observed at a Mo concentration of 4.4 at.% and is 65.3 cm2 V- 1 s- 1. The maximum conductivity is observed at 5.9 at.% molybdenum doping and is equal to 5000 Ω- 1 cm- 1. The carrier concentration increases with increasing molybdenum doping to a maximum value of 6.6•1020 cm- 3 at a doping concentration of 8.6 at.%. The optical transparency is high (> 80%) in a wide spectral range that is dependent on the process parameters.

AB - The effects of molybdenum doping (0-12 at.%) on the optical and electrical properties of In2O3 were investigated using combinatorial sputter deposition in combination with combinatorial analysis techniques. The electrical properties are highly dependent on the deposition temperature and the molybdenum doping concentration. A minimum temperature between 300 °C and 400 °C is needed to activate the carriers. The maximum mobility is observed at a Mo concentration of 4.4 at.% and is 65.3 cm2 V- 1 s- 1. The maximum conductivity is observed at 5.9 at.% molybdenum doping and is equal to 5000 Ω- 1 cm- 1. The carrier concentration increases with increasing molybdenum doping to a maximum value of 6.6•1020 cm- 3 at a doping concentration of 8.6 at.%. The optical transparency is high (> 80%) in a wide spectral range that is dependent on the process parameters.

KW - Combinatorial science

KW - Indium oxide (206)

KW - Physical vapour deposition (370)

KW - Transparent conductive oxide

UR - http://www.scopus.com/inward/record.url?scp=28044451111&partnerID=8YFLogxK

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DO - 10.1016/j.tsf.2005.08.314

M3 - Article

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SN - 0040-6090

VL - 496

SP - 70

EP - 74

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

T2 - Proceedings of the Fourth International Symposium on Transparent Oxide Thin Film for Electronics and Optics (TOEO-4)

Y2 - 7 April 2005 through 8 April 2005

ER -

High-Mobility Molybdenum Doped Indium Oxide

Abstract

NREL Publication Number

Keywords

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