High-Mobility Molybdenum Doped Indium Oxide

M. F.A.M. Van Hest, M. S. Dabney, J. D. Perkins, D. S. Ginley

Research output: Contribution to journalArticlepeer-review

62 Scopus Citations

Abstract

The effects of molybdenum doping (0-12 at.%) on the optical and electrical properties of In2O3 were investigated using combinatorial sputter deposition in combination with combinatorial analysis techniques. The electrical properties are highly dependent on the deposition temperature and the molybdenum doping concentration. A minimum temperature between 300 °C and 400 °C is needed to activate the carriers. The maximum mobility is observed at a Mo concentration of 4.4 at.% and is 65.3 cm2 V- 1 s- 1. The maximum conductivity is observed at 5.9 at.% molybdenum doping and is equal to 5000 Ω- 1 cm- 1. The carrier concentration increases with increasing molybdenum doping to a maximum value of 6.6•1020 cm- 3 at a doping concentration of 8.6 at.%. The optical transparency is high (> 80%) in a wide spectral range that is dependent on the process parameters.

Original languageAmerican English
Pages (from-to)70-74
Number of pages5
JournalThin Solid Films
Volume496
Issue number1
DOIs
StatePublished - 2006
EventProceedings of the Fourth International Symposium on Transparent Oxide Thin Film for Electronics and Optics (TOEO-4) -
Duration: 7 Apr 20058 Apr 2005

NREL Publication Number

  • NREL/JA-520-38058

Keywords

  • Combinatorial science
  • Indium oxide (206)
  • Physical vapour deposition (370)
  • Transparent conductive oxide

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