High-Mobility Transparent Conducting Mo-Doped In2O3 Thin Films by Pulsed Laser Deposition

C. Warmsingh, Y. Yoshida, D. W. Readey, C. W. Teplin, J. D. Perkins, P. A. Parilla, L. M. Gedvilas, B. M. Keyes, D. S. Ginley

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Abstract

Mo-doped indium oxide (IMO) thin films were grown from indium oxide targets using pulsed laser deposition (PLD). The results show that the biaxial growth of Mo-doped In 2O 3 can be achieved on YSZ(100). The electrical and optical properties of IMO films deposited from the 2 wt% Mo-In 2O 3 target is superior to those deposited from the 1 or 4 wt% Mo-In 2O 3 targets. The In 1.94Mo 0.06O 3+δ target, where the average mobility is greater than 95 cm 2 V -1s -1 across a 1 cm × 1 cm sample, gave the best electrical results.

Original languageAmerican English
Pages (from-to)3831-3833
Number of pages3
JournalJournal of Applied Physics
Volume95
Issue number7
DOIs
StatePublished - 1 Apr 2004

NREL Publication Number

  • NREL/JA-520-34698

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