Abstract
Mo-doped indium oxide (IMO) thin films were grown from indium oxide targets using pulsed laser deposition (PLD). The results show that the biaxial growth of Mo-doped In 2O 3 can be achieved on YSZ(100). The electrical and optical properties of IMO films deposited from the 2 wt% Mo-In 2O 3 target is superior to those deposited from the 1 or 4 wt% Mo-In 2O 3 targets. The In 1.94Mo 0.06O 3+δ target, where the average mobility is greater than 95 cm 2 V -1s -1 across a 1 cm × 1 cm sample, gave the best electrical results.
Original language | American English |
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Pages (from-to) | 3831-3833 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 95 |
Issue number | 7 |
DOIs | |
State | Published - 1 Apr 2004 |
NREL Publication Number
- NREL/JA-520-34698