Abstract
With CuInSe2 polycrystalline thin films approaching 17% total-area photovoltaic efficiencies, there is strong interest in the characterization of single-crystal copper indium selenides. The surface of these films is often composed of a very thin layer of copper-deficient material with compositions in the 62.5-75 mole% In2Se3 region on the Cu2Se/In2Se3 pseudobinary tie line. Growth oflarge-grained ingots in this region has been accomplished. The liquid-encapsulated directional solidification technique in 70 atmospheres of argon was used because of the volatile nature of selenium at elevated temperatures. Crystal growth parameters, electro-optical characterization, and X-ra y diffraction data will be presented.
Original language | American English |
---|---|
Pages | 95-103 |
Number of pages | 9 |
State | Published - 1995 |
Event | Crystal Growth of Novel Electronic Materials: 97th Annual Meeting of the American Ceramic Society - Cincinnati, Ohio Duration: 1 May 1995 → 3 May 1995 |
Conference
Conference | Crystal Growth of Novel Electronic Materials: 97th Annual Meeting of the American Ceramic Society |
---|---|
City | Cincinnati, Ohio |
Period | 1/05/95 → 3/05/95 |
NREL Publication Number
- NREL/CP-451-7725