High-Temperature Ferroelectric Behavior of Al0.7Sc0.3N

Daniel Drury, Keisuke Yazawa, Andriy Zakutayev, Brendan Hanrahan, Geoff Brennecka

Research output: Contribution to journalArticlepeer-review

30 Scopus Citations

Abstract

Currently, there is a lack of nonvolatile memory (NVM) technology that can operate continuously at temperatures >200 °C. While ferroelectric NVM has previously demonstrated long polarization retention and >1013 read/write cycles at room temperature, the largest hurdle comes at higher temperatures for conventional perovskite ferroelectrics. Here, we demonstrate how AlScN can enable high-temperature (>200 °C) nonvolatile memory. The c-axis textured thin films were prepared via reactive radiofrequency magnetron sputtering onto a highly textured Pt (111) surface. Photolithographically defined Pt top electrodes completed the capacitor stack, which was tested in a high temperature vacuum probe station up to 400 °C. Polarization–electric field hysteresis loops between 23 and 400 °C reveal minimal changes in the remanent polarization values, while the coercive field decreased from 4.3 MV/cm to 2.6 MV/cm. Even at 400 °C, the polarization retention exhibited negligible loss for up to 1000 s, demonstrating promise for potential nonvolatile memory capable of high−temperature operation. Fatigue behavior also showed a moderate dependence on operating temperature, but the mechanisms of degradation require additional study.

Original languageAmerican English
Article number887
Number of pages9
JournalMicromachines
Volume13
Issue number6
DOIs
StatePublished - 2022

Bibliographical note

Publisher Copyright:
© 2022 by the authors. Licensee MDPI, Basel, Switzerland.

NREL Publication Number

  • NREL/JA-5K00-83088

Keywords

  • AlScN
  • fatigue
  • ferroelectric
  • film
  • high temperature
  • nonvolatile memory
  • retention
  • sputter deposition
  • wurtzite

Fingerprint

Dive into the research topics of 'High-Temperature Ferroelectric Behavior of Al0.7Sc0.3N'. Together they form a unique fingerprint.

Cite this