High-Temperature Nucleation of GaP on V-Grooved Si

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10 Scopus Citations


The use of nanopatterned {111}-faceted v-grooves has recently shown promise for growing high-quality III-V material on Si. Here, we study the effect of reactor conditions and surface pretreatments on the nucleation of GaP on v-grooved Si in a high-temperature regime, which offers the promise of a defect-free GaP/Si interface favorable for Si passivation and dislocation glide in the GaP. X-ray photoelectron spectroscopy was used to understand the Si surface chemistry prior to nucleation, and transmission electron microscopy was used to probe material quality of the nuclei. Temperature and V/III ratio were found to control the facet selectivity of nucleation. We demonstrate a condition of high temperature and high V-III ratio that leads to uniform nucleation at the bottom of the trenches, with initial material free of nucleation-related interfacial defects. This optimized condition was then shown to coalesce into a thin film after additional growth.

Original languageAmerican English
Pages (from-to)6745-6751
Number of pages7
JournalCrystal Growth and Design
Issue number10
StatePublished - 7 Oct 2020

Bibliographical note

Publisher Copyright:
Copyright © 2020 American Chemical Society.

NREL Publication Number

  • NREL/JA-5900-76081


  • GaP on Si
  • III-V heteroepitaxy
  • nanopatterning


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