High Throughput Semiconductor Deposition System

David Young (Inventor), Aaron Ptak (Inventor), Kevin Schulte (Inventor), John Simon (Inventor), Thomas Kuech (Inventor)

Research output: Patent


A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-Y materials grown by hydride vapor phase epitaxy (HYPE). The operating principles of the HYPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HYPE-type reactants and gases. Using HYPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 A micrometre/minute.
Original languageAmerican English
Patent number10,192,740 B2
Filing date29/01/19
StatePublished - 2019

NREL Publication Number

  • NREL/PT-5900-73251


  • HVPE
  • hydride vapor phase epitaxy
  • inline production
  • reactor
  • semiconductor films


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