Abstract
Four-junction GaInP/GaAs/GaInNAs/Ge solar cells are a widely-pursued route toward AMO efficiencies of 35% and above, and terrestrial efficiencies of up to 40%. Extensive research into the new material system of GaInNAs has so far yielded subcells with AMO current densities far below the ∼17 mA/cm2 needed to current match the other subcells in the stack. A new multijunction structure, a 5-junction GaInP/GaInP/GaAs/GaInNAs/Ge cell, divides the solar spectrum more finely in order to relax this current matching requirement, by using an optically thin, high-bandgap Gainp top subcell, with an additional thick, low-bandgap Gainp subcell beneath it, in combination with a GaInNAs subcell. In this way, the 5-junction cell design allows the practical use of GaInNAs subcells to increase the efficiency of multijunction cells. Light I-V and external quantum efficiency measurements of the component subcells of such 5-junction cells are discussed. Experimental results are presented for the first time on GaInP/GaInP/GaAs/GaInNAs/Ge cells with the top four junctions active, with measured Voc of 3.90 V.
Original language | American English |
---|---|
Pages | 852-855 |
Number of pages | 4 |
State | Published - 2002 |
Event | 29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: 19 May 2002 → 24 May 2002 |
Conference
Conference | 29th IEEE Photovoltaic Specialists Conference |
---|---|
Country/Territory | United States |
City | New Orleans, LA |
Period | 19/05/02 → 24/05/02 |
NREL Publication Number
- NREL/CP-520-33761