High-Voltage, Low-Current GaInP/GaInP/GaAs/GaInNAs/Ge Solar Cells

R. R. King, P. C. Colter, D. E. Joslin, K. M. Edmondson, D. D. Krut, N. H. Karam, Sarah Kurtz

Research output: Contribution to conferencePaperpeer-review

30 Scopus Citations


Four-junction GaInP/GaAs/GaInNAs/Ge solar cells are a widely-pursued route toward AMO efficiencies of 35% and above, and terrestrial efficiencies of up to 40%. Extensive research into the new material system of GaInNAs has so far yielded subcells with AMO current densities far below the ∼17 mA/cm2 needed to current match the other subcells in the stack. A new multijunction structure, a 5-junction GaInP/GaInP/GaAs/GaInNAs/Ge cell, divides the solar spectrum more finely in order to relax this current matching requirement, by using an optically thin, high-bandgap Gainp top subcell, with an additional thick, low-bandgap Gainp subcell beneath it, in combination with a GaInNAs subcell. In this way, the 5-junction cell design allows the practical use of GaInNAs subcells to increase the efficiency of multijunction cells. Light I-V and external quantum efficiency measurements of the component subcells of such 5-junction cells are discussed. Experimental results are presented for the first time on GaInP/GaInP/GaAs/GaInNAs/Ge cells with the top four junctions active, with measured Voc of 3.90 V.

Original languageAmerican English
Number of pages4
StatePublished - 2002
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: 19 May 200224 May 2002


Conference29th IEEE Photovoltaic Specialists Conference
Country/TerritoryUnited States
CityNew Orleans, LA

NREL Publication Number

  • NREL/CP-520-33761


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