Abstract
We investigate the effect of high work function contacts in halide perovskite absorber-based photovoltaic devices. Photoemission spectroscopy measurements reveal that band bending is induced in the absorber by the deposition of the high work function molybdenum trioxide (MoO3). We find that direct contact between MoO3 and the perovskite leads to a chemical reaction, which diminishes device functionality. Introducing an ultrathin spiro-MeOTAD buffer layer prevents the reaction, yet the altered evolution of the energy levels in the methylammonium lead iodide (MAPbI3) layer at the interface still negatively impacts device performance.
Original language | American English |
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Pages (from-to) | 31491-31499 |
Number of pages | 9 |
Journal | ACS Applied Materials and Interfaces |
Volume | 8 |
Issue number | 46 |
DOIs | |
State | Published - 2016 |
NREL Publication Number
- NREL/JA-5K00-67634
Keywords
- band offsets
- charge carrier transport
- electronic structures/processes/mechanisms
- hybrid materials
- photoemission spectroscopy
- photovoltaic devices