Highly Efficient Band-Edge Emission from InP Quantum Dots

Olga I. Mićić; Julian Sprague; Zhenghao Lu; Arthur J. Nozik

doi:10.1063/1.115807

Highly Efficient Band-Edge Emission from InP Quantum Dots

Olga I. Mićić, Julian Sprague, Zhenghao Lu, Arthur J. Nozik

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

269 Scopus Citations

Abstract

High quality InP quantum dots with diameters ranging from 25 to 45 Å, have been prepared; these quantum dots (QDs) show high quantum yields for band-edge photoluminescence (lowest energy HOMO-LUMO transition). The wavelength of the blue-shifted band-edge emission ranges from about 575 to 730 nm depending on QD size. The quantum yield for photoluminescence is 30% at 300 K and 60% at 10 K; the multiexponential decay of this emission exhibits lifetimes ranging from 5 to 50 ns. Deep red-shifted emission due to trapping of carriers in defect states on the QD surface which exhibits lifetimes above 500 ns, has been eliminated by treating the QDs with a dilute solution of HF or NH4F.

Original language	American English
Pages (from-to)	3150-3152
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	22
DOIs	https://doi.org/10.1063/1.115807 https://doi.org/10.1063/1.115807
State	Published - 1996

NREL Publication Number

NREL/JA-453-21360

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title = "Highly Efficient Band-Edge Emission from InP Quantum Dots",

abstract = "High quality InP quantum dots with diameters ranging from 25 to 45 {\AA}, have been prepared; these quantum dots (QDs) show high quantum yields for band-edge photoluminescence (lowest energy HOMO-LUMO transition). The wavelength of the blue-shifted band-edge emission ranges from about 575 to 730 nm depending on QD size. The quantum yield for photoluminescence is 30% at 300 K and 60% at 10 K; the multiexponential decay of this emission exhibits lifetimes ranging from 5 to 50 ns. Deep red-shifted emission due to trapping of carriers in defect states on the QD surface which exhibits lifetimes above 500 ns, has been eliminated by treating the QDs with a dilute solution of HF or NH4F.",

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year = "1996",

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journal = "Applied Physics Letters",

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AU - Lu, Zhenghao

AU - Nozik, Arthur J.

PY - 1996

Y1 - 1996

N2 - High quality InP quantum dots with diameters ranging from 25 to 45 Å, have been prepared; these quantum dots (QDs) show high quantum yields for band-edge photoluminescence (lowest energy HOMO-LUMO transition). The wavelength of the blue-shifted band-edge emission ranges from about 575 to 730 nm depending on QD size. The quantum yield for photoluminescence is 30% at 300 K and 60% at 10 K; the multiexponential decay of this emission exhibits lifetimes ranging from 5 to 50 ns. Deep red-shifted emission due to trapping of carriers in defect states on the QD surface which exhibits lifetimes above 500 ns, has been eliminated by treating the QDs with a dilute solution of HF or NH4F.

AB - High quality InP quantum dots with diameters ranging from 25 to 45 Å, have been prepared; these quantum dots (QDs) show high quantum yields for band-edge photoluminescence (lowest energy HOMO-LUMO transition). The wavelength of the blue-shifted band-edge emission ranges from about 575 to 730 nm depending on QD size. The quantum yield for photoluminescence is 30% at 300 K and 60% at 10 K; the multiexponential decay of this emission exhibits lifetimes ranging from 5 to 50 ns. Deep red-shifted emission due to trapping of carriers in defect states on the QD surface which exhibits lifetimes above 500 ns, has been eliminated by treating the QDs with a dilute solution of HF or NH4F.

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Highly Efficient Band-Edge Emission from InP Quantum Dots

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