Highly Efficient Band-Edge Emission from InP Quantum Dots

Olga I. Mićić, Julian Sprague, Zhenghao Lu, Arthur J. Nozik

Research output: Contribution to journalArticlepeer-review

260 Scopus Citations

Abstract

High quality InP quantum dots with diameters ranging from 25 to 45 Å, have been prepared; these quantum dots (QDs) show high quantum yields for band-edge photoluminescence (lowest energy HOMO-LUMO transition). The wavelength of the blue-shifted band-edge emission ranges from about 575 to 730 nm depending on QD size. The quantum yield for photoluminescence is 30% at 300 K and 60% at 10 K; the multiexponential decay of this emission exhibits lifetimes ranging from 5 to 50 ns. Deep red-shifted emission due to trapping of carriers in defect states on the QD surface which exhibits lifetimes above 500 ns, has been eliminated by treating the QDs with a dilute solution of HF or NH4F.

Original languageAmerican English
Pages (from-to)3150-3152
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number22
DOIs
StatePublished - 1996

NREL Publication Number

  • NREL/JA-453-21360

Fingerprint

Dive into the research topics of 'Highly Efficient Band-Edge Emission from InP Quantum Dots'. Together they form a unique fingerprint.

Cite this