Homogeneous and Heterogeneous Thermal Decomposition Rates of Trimethylgallium and Arsine and Their Relevance to the Growth of GaAs by MOCVD

doi:10.1016/0022-0248(86)90300-3

Homogeneous and Heterogeneous Thermal Decomposition Rates of Trimethylgallium and Arsine and Their Relevance to the Growth of GaAs by MOCVD

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	188-193
Number of pages	6
Journal	Journal of Crystal Growth
Volume	77
Issue number	1-3
DOIs	https://doi.org/10.1016/0022-0248(86)90300-3
State	Published - 1986

Bibliographical note

Work performed by Department of Electrical Engineering and Materials Science and Center for Photonic Technology, University of Southern California, Los Angeles, California

NREL Publication Number

ACNR/JA-9664

Access to Document

10.1016/0022-0248(86)90300-3

Cite this

@article{5301ff5b473d47c8a4506c1d4bfe6090,

title = "Homogeneous and Heterogeneous Thermal Decomposition Rates of Trimethylgallium and Arsine and Their Relevance to the Growth of GaAs by MOCVD",

author = "NREL",

note = "Work performed by Department of Electrical Engineering and Materials Science and Center for Photonic Technology, University of Southern California, Los Angeles, California",

year = "1986",

doi = "10.1016/0022-0248(86)90300-3",

language = "American English",

volume = "77",

pages = "188--193",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - Homogeneous and Heterogeneous Thermal Decomposition Rates of Trimethylgallium and Arsine and Their Relevance to the Growth of GaAs by MOCVD

AU - NREL, null

N1 - Work performed by Department of Electrical Engineering and Materials Science and Center for Photonic Technology, University of Southern California, Los Angeles, California

PY - 1986

Y1 - 1986

U2 - 10.1016/0022-0248(86)90300-3

DO - 10.1016/0022-0248(86)90300-3

M3 - Article

SN - 0022-0248

VL - 77

SP - 188

EP - 193

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-3

ER -