Homogeneous and Inhomogeneous Linewidths of Excitons in Partially Ordered Ga0.52In0.48P

P. Grossmann; J. Feldmann; E. O. Göbel; P. Thomas; D. J. Arent; K. A. Bertness; J. M. Olson

doi:10.1063/1.112742

Homogeneous and Inhomogeneous Linewidths of Excitons in Partially Ordered Ga0.52In0.48P

P. Grossmann, J. Feldmann, E. O. Göbel, P. Thomas, D. J. Arent, K. A. Bertness, J. M. Olson

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Abstract

We report picosecond four-wave mixing experiments on Ga _0.52In_0.48P grown by organometallic vapor phase epitaxy on GaAs substrates. The spectral behavior of the homogeneous linewidth in the range of the inhomogeneously broadened band gap excitonic resonance is found to be different for a more disordered as compared to a partially ordered structure. Whereas the former shows the normal alloy behavior, the behavior of the partially ordered sample supports the assumption that its structure consists of ordered domains with varying degrees of order. This means, in particular, that the main origin of the inhomogeneous broadening is different for the disordered and ordered case. In addition, a polarization dependence of the four-wave mixing signal is only observed for the more disordered sample.

Original language	American English
Pages (from-to)	2347-2349
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	18
DOIs	https://doi.org/10.1063/1.112742 https://doi.org/10.1063/1.112742
State	Published - 1994

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NREL/JA-452-7043

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title = "Homogeneous and Inhomogeneous Linewidths of Excitons in Partially Ordered Ga0.52In0.48P",

abstract = "We report picosecond four-wave mixing experiments on Ga 0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates. The spectral behavior of the homogeneous linewidth in the range of the inhomogeneously broadened band gap excitonic resonance is found to be different for a more disordered as compared to a partially ordered structure. Whereas the former shows the normal alloy behavior, the behavior of the partially ordered sample supports the assumption that its structure consists of ordered domains with varying degrees of order. This means, in particular, that the main origin of the inhomogeneous broadening is different for the disordered and ordered case. In addition, a polarization dependence of the four-wave mixing signal is only observed for the more disordered sample.",

author = "P. Grossmann and J. Feldmann and G{\"o}bel, {E. O.} and P. Thomas and Arent, {D. J.} and Bertness, {K. A.} and Olson, {J. M.}",

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T1 - Homogeneous and Inhomogeneous Linewidths of Excitons in Partially Ordered Ga0.52In0.48P

AU - Grossmann, P.

AU - Feldmann, J.

AU - Göbel, E. O.

AU - Thomas, P.

AU - Arent, D. J.

AU - Bertness, K. A.

AU - Olson, J. M.

PY - 1994

Y1 - 1994

N2 - We report picosecond four-wave mixing experiments on Ga 0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates. The spectral behavior of the homogeneous linewidth in the range of the inhomogeneously broadened band gap excitonic resonance is found to be different for a more disordered as compared to a partially ordered structure. Whereas the former shows the normal alloy behavior, the behavior of the partially ordered sample supports the assumption that its structure consists of ordered domains with varying degrees of order. This means, in particular, that the main origin of the inhomogeneous broadening is different for the disordered and ordered case. In addition, a polarization dependence of the four-wave mixing signal is only observed for the more disordered sample.

AB - We report picosecond four-wave mixing experiments on Ga 0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates. The spectral behavior of the homogeneous linewidth in the range of the inhomogeneously broadened band gap excitonic resonance is found to be different for a more disordered as compared to a partially ordered structure. Whereas the former shows the normal alloy behavior, the behavior of the partially ordered sample supports the assumption that its structure consists of ordered domains with varying degrees of order. This means, in particular, that the main origin of the inhomogeneous broadening is different for the disordered and ordered case. In addition, a polarization dependence of the four-wave mixing signal is only observed for the more disordered sample.

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DO - 10.1063/1.112742

M3 - Article

AN - SCOPUS:0348212027

SN - 0003-6951

VL - 65

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EP - 2349

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Homogeneous and Inhomogeneous Linewidths of Excitons in Partially Ordered Ga0.52In0.48P

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