Homogeneous Linewidths of Excitons In High and Low Band Gap Ga0.52In0.48P

P. Grossmann, J. Feldmann, E. O. Göbel, P. Thomas, D. J. Arent, K. A. Bertness, J. M. Olson

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Photoluminescence and picosecond four‐wave‐mixing experiments are reported on Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates. The spectral behavior of the homogeneous linewidth in the range of the inhomogeneously broadened band gap excitonic resonance is found to be different for a high band gap as compared to a low band gap structure. Whereas the former shows the normal alloy behavior, the behavior of the low band gap sample supports the assumption that its structure consists of ordered domains with varying degrees of order. This means in particular that the main origin of the inhomogeneous broadening is different for the high and low band gap cases.

Original languageAmerican English
Pages (from-to)557-563
Number of pages7
JournalPhysica Status Solidi (B) Basic Research
Issue number1
StatePublished - 1995

NREL Publication Number

  • ACNR/JA-16865


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