Homogeneous Linewidths of Excitons In High and Low Band Gap Ga0.52In0.48P

P. Grossmann; J. Feldmann; E. O. Göbel; P. Thomas; D. J. Arent; K. A. Bertness; J. M. Olson

doi:10.1002/pssb.2221880153

Homogeneous Linewidths of Excitons In High and Low Band Gap Ga0.52In0.48P

P. Grossmann, J. Feldmann, E. O. Göbel, P. Thomas, D. J. Arent, K. A. Bertness, J. M. Olson

Director

Research output: Contribution to journal › Article › peer-review

1 Scopus Citations

Abstract

Photoluminescence and picosecond four‐wave‐mixing experiments are reported on Ga_0.52In_0.48P grown by organometallic vapor phase epitaxy on GaAs substrates. The spectral behavior of the homogeneous linewidth in the range of the inhomogeneously broadened band gap excitonic resonance is found to be different for a high band gap as compared to a low band gap structure. Whereas the former shows the normal alloy behavior, the behavior of the low band gap sample supports the assumption that its structure consists of ordered domains with varying degrees of order. This means in particular that the main origin of the inhomogeneous broadening is different for the high and low band gap cases.

Original language	American English
Pages (from-to)	557-563
Number of pages	7
Journal	Physica Status Solidi (B) Basic Research
Volume	188
Issue number	1
DOIs	https://doi.org/10.1002/pssb.2221880153 https://doi.org/10.1002/pssb.2221880153
State	Published - 1995

NREL Publication Number

ACNR/JA-16865

Access to Document

Cite this

@article{f63e3f5da29842d4948a4f3a36cd2cfb,

title = "Homogeneous Linewidths of Excitons In High and Low Band Gap Ga0.52In0.48P",

abstract = "Photoluminescence and picosecond four‐wave‐mixing experiments are reported on Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates. The spectral behavior of the homogeneous linewidth in the range of the inhomogeneously broadened band gap excitonic resonance is found to be different for a high band gap as compared to a low band gap structure. Whereas the former shows the normal alloy behavior, the behavior of the low band gap sample supports the assumption that its structure consists of ordered domains with varying degrees of order. This means in particular that the main origin of the inhomogeneous broadening is different for the high and low band gap cases.",

author = "P. Grossmann and J. Feldmann and G{\"o}bel, {E. O.} and P. Thomas and Arent, {D. J.} and Bertness, {K. A.} and Olson, {J. M.}",

year = "1995",

doi = "10.1002/pssb.2221880153",

language = "American English",

volume = "188",

pages = "557--563",

journal = "Physica Status Solidi (B) Basic Research",

issn = "0370-1972",

publisher = "Wiley-VCH Verlag",

number = "1",

}

TY - JOUR

T1 - Homogeneous Linewidths of Excitons In High and Low Band Gap Ga0.52In0.48P

AU - Grossmann, P.

AU - Feldmann, J.

AU - Göbel, E. O.

AU - Thomas, P.

AU - Arent, D. J.

AU - Bertness, K. A.

AU - Olson, J. M.

PY - 1995

Y1 - 1995

N2 - Photoluminescence and picosecond four‐wave‐mixing experiments are reported on Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates. The spectral behavior of the homogeneous linewidth in the range of the inhomogeneously broadened band gap excitonic resonance is found to be different for a high band gap as compared to a low band gap structure. Whereas the former shows the normal alloy behavior, the behavior of the low band gap sample supports the assumption that its structure consists of ordered domains with varying degrees of order. This means in particular that the main origin of the inhomogeneous broadening is different for the high and low band gap cases.

AB - Photoluminescence and picosecond four‐wave‐mixing experiments are reported on Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates. The spectral behavior of the homogeneous linewidth in the range of the inhomogeneously broadened band gap excitonic resonance is found to be different for a high band gap as compared to a low band gap structure. Whereas the former shows the normal alloy behavior, the behavior of the low band gap sample supports the assumption that its structure consists of ordered domains with varying degrees of order. This means in particular that the main origin of the inhomogeneous broadening is different for the high and low band gap cases.

UR - http://www.scopus.com/inward/record.url?scp=84990652752&partnerID=8YFLogxK

U2 - 10.1002/pssb.2221880153

DO - 10.1002/pssb.2221880153

M3 - Article

AN - SCOPUS:84990652752

SN - 0370-1972

VL - 188

SP - 557

EP - 563

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 1

ER -

Homogeneous Linewidths of Excitons In High and Low Band Gap Ga0.52In0.48P

Abstract

NREL Publication Number

Access to Document

Other files and links

Fingerprint

Cite this