Hot Carrier Injection of Photogenerated Electrons at Indium Phosphide-Electrolyte Interfaces

Gerald Cooper; John A. Turner; Bruce A. Parkinson; Arthur J. Nozik

doi:10.1063/1.331928

Hot Carrier Injection of Photogenerated Electrons at Indium Phosphide-Electrolyte Interfaces

Gerald Cooper, John A. Turner, Bruce A. Parkinson, Arthur J. Nozik

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

60 Scopus Citations

Abstract

Hot electron reduction of p-nitrobenzonitrile at (111) p-InP in acetonitrile electrolyte was observed as a supraband-edge redox reaction. The band-edge positions of the p-InP electrode were unequivocally established from Mott-Schottky data obtained as a function of light intensity and frequency. Special conditions of low light intensity and electrode potential were found wherein the semiconductor band edges were either fixed or had moved only very slightly with respect to redox potentials in the electrolyte, such that the respective supraband-edge redox reactions were definitely outside the band gap of InP.

Original language	American English
Pages (from-to)	6463-6473
Number of pages	11
Journal	Journal of Applied Physics
Volume	54
Issue number	11
DOIs	https://doi.org/10.1063/1.331928 https://doi.org/10.1063/1.331928
State	Published - 1983

NREL Publication Number

ACNR/JA-233-3152

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@article{f94ea63e5c82496289b070f26fef2109,

title = "Hot Carrier Injection of Photogenerated Electrons at Indium Phosphide-Electrolyte Interfaces",

abstract = "Hot electron reduction of p-nitrobenzonitrile at (111) p-InP in acetonitrile electrolyte was observed as a supraband-edge redox reaction. The band-edge positions of the p-InP electrode were unequivocally established from Mott-Schottky data obtained as a function of light intensity and frequency. Special conditions of low light intensity and electrode potential were found wherein the semiconductor band edges were either fixed or had moved only very slightly with respect to redox potentials in the electrolyte, such that the respective supraband-edge redox reactions were definitely outside the band gap of InP.",

author = "Gerald Cooper and Turner, {John A.} and Parkinson, {Bruce A.} and Nozik, {Arthur J.}",

year = "1983",

doi = "10.1063/1.331928",

language = "American English",

volume = "54",

pages = "6463--6473",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Hot Carrier Injection of Photogenerated Electrons at Indium Phosphide-Electrolyte Interfaces

AU - Cooper, Gerald

AU - Turner, John A.

AU - Parkinson, Bruce A.

AU - Nozik, Arthur J.

PY - 1983

Y1 - 1983

N2 - Hot electron reduction of p-nitrobenzonitrile at (111) p-InP in acetonitrile electrolyte was observed as a supraband-edge redox reaction. The band-edge positions of the p-InP electrode were unequivocally established from Mott-Schottky data obtained as a function of light intensity and frequency. Special conditions of low light intensity and electrode potential were found wherein the semiconductor band edges were either fixed or had moved only very slightly with respect to redox potentials in the electrolyte, such that the respective supraband-edge redox reactions were definitely outside the band gap of InP.

AB - Hot electron reduction of p-nitrobenzonitrile at (111) p-InP in acetonitrile electrolyte was observed as a supraband-edge redox reaction. The band-edge positions of the p-InP electrode were unequivocally established from Mott-Schottky data obtained as a function of light intensity and frequency. Special conditions of low light intensity and electrode potential were found wherein the semiconductor band edges were either fixed or had moved only very slightly with respect to redox potentials in the electrolyte, such that the respective supraband-edge redox reactions were definitely outside the band gap of InP.

UR - http://www.scopus.com/inward/record.url?scp=0020846057&partnerID=8YFLogxK

U2 - 10.1063/1.331928

DO - 10.1063/1.331928

M3 - Article

AN - SCOPUS:0020846057

SN - 0021-8979

VL - 54

SP - 6463

EP - 6473

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Hot Carrier Injection of Photogenerated Electrons at Indium Phosphide-Electrolyte Interfaces

Abstract

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