Abstract
We present our investigations of a novel concept for increasing the efficiency of solid state photovoltaic devices. We propose that hot photogenerated carriers can reduce radiative recombination in a p-i-n device structure that has an intrinsic superlattice absorption region. The reduced radiative recombination leads to higher photovoltage and conversion efficiency. We present experimentalresults on P-i(SL)-N devices fabricated from GaAs/AlGaAs, along with predictions of idealized hot carrier solar cell behavior obtained using a rigorous energy balance device model.
Original language | American English |
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Pages | 309-316 |
Number of pages | 8 |
State | Published - 1997 |
Event | Future Generation Photovoltaic Technologies: First NREL Conference - Denver, Colorado Duration: 22 Mar 1997 → 26 Mar 1997 |
Conference
Conference | Future Generation Photovoltaic Technologies: First NREL Conference |
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City | Denver, Colorado |
Period | 22/03/97 → 26/03/97 |
NREL Publication Number
- NREL/CP-590-24473