Hot-Wire CVD N-Type Emitter on P-Type Crystalline Si Solar Cells

Qi Wang; M. R. Page; Eugene Iwaniczko; Evan Williams; Yanfa Yan; T. H. Wang; T. F. Ciszek

Hot-Wire CVD N-Type Emitter on P-Type Crystalline Si Solar Cells

Qi Wang, M. R. Page, Eugene Iwaniczko, Evan Williams, Yanfa Yan, T. H. Wang, T. F. Ciszek

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

We have developed efficient p-type crystalline-Si-based solar cells using a fast (1 min) and low-substrate temperature (<220°C) hot-wire CVD technique to deposit n-type Si thin films to form n-p junction. We achieved 13.3% energy conversion efficiency with V_oc of 0.58 V, FF of 0.773, and J_sc of 29.86 mA/cm² under AM 1.5 for a 1-cm ² solar cell, which is the highest repotted efficiency to date for a single-junction device using the hot-wire CVD technique. Transmission electron microscopy reveals epitixal growth of Si at the junction, Quantum efficiency measurement on this solar cell shows over 90% response in the region between 540 and 780 nm, but a relatively weak blue and near infrared response. The solar cells show no degradation after 1000 hours of standard light soaking.

Original language	American English
Pages	1427-1430
Number of pages	4
State	Published - 2003
Event	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: 11 May 2003 → 18 May 2003

Conference

Conference	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/Territory	Japan
City	Osaka
Period	11/05/03 → 18/05/03

NREL Publication Number

NREL/CP-520-34037

Cite this

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title = "Hot-Wire CVD N-Type Emitter on P-Type Crystalline Si Solar Cells",

abstract = "We have developed efficient p-type crystalline-Si-based solar cells using a fast (1 min) and low-substrate temperature (<220°C) hot-wire CVD technique to deposit n-type Si thin films to form n-p junction. We achieved 13.3% energy conversion efficiency with Voc of 0.58 V, FF of 0.773, and Jsc of 29.86 mA/cm2 under AM 1.5 for a 1-cm 2 solar cell, which is the highest repotted efficiency to date for a single-junction device using the hot-wire CVD technique. Transmission electron microscopy reveals epitixal growth of Si at the junction, Quantum efficiency measurement on this solar cell shows over 90% response in the region between 540 and 780 nm, but a relatively weak blue and near infrared response. The solar cells show no degradation after 1000 hours of standard light soaking.",

author = "Qi Wang and Page, {M. R.} and Eugene Iwaniczko and Evan Williams and Yanfa Yan and Wang, {T. H.} and Ciszek, {T. F.}",

year = "2003",

language = "American English",

pages = "1427--1430",

note = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion ; Conference date: 11-05-2003 Through 18-05-2003",

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TY - CONF

T1 - Hot-Wire CVD N-Type Emitter on P-Type Crystalline Si Solar Cells

AU - Wang, Qi

AU - Page, M. R.

AU - Iwaniczko, Eugene

AU - Williams, Evan

AU - Yan, Yanfa

AU - Wang, T. H.

AU - Ciszek, T. F.

PY - 2003

Y1 - 2003

N2 - We have developed efficient p-type crystalline-Si-based solar cells using a fast (1 min) and low-substrate temperature (<220°C) hot-wire CVD technique to deposit n-type Si thin films to form n-p junction. We achieved 13.3% energy conversion efficiency with Voc of 0.58 V, FF of 0.773, and Jsc of 29.86 mA/cm2 under AM 1.5 for a 1-cm 2 solar cell, which is the highest repotted efficiency to date for a single-junction device using the hot-wire CVD technique. Transmission electron microscopy reveals epitixal growth of Si at the junction, Quantum efficiency measurement on this solar cell shows over 90% response in the region between 540 and 780 nm, but a relatively weak blue and near infrared response. The solar cells show no degradation after 1000 hours of standard light soaking.

AB - We have developed efficient p-type crystalline-Si-based solar cells using a fast (1 min) and low-substrate temperature (<220°C) hot-wire CVD technique to deposit n-type Si thin films to form n-p junction. We achieved 13.3% energy conversion efficiency with Voc of 0.58 V, FF of 0.773, and Jsc of 29.86 mA/cm2 under AM 1.5 for a 1-cm 2 solar cell, which is the highest repotted efficiency to date for a single-junction device using the hot-wire CVD technique. Transmission electron microscopy reveals epitixal growth of Si at the junction, Quantum efficiency measurement on this solar cell shows over 90% response in the region between 540 and 780 nm, but a relatively weak blue and near infrared response. The solar cells show no degradation after 1000 hours of standard light soaking.

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M3 - Paper

AN - SCOPUS:6344228583

SP - 1427

EP - 1430

T2 - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

Y2 - 11 May 2003 through 18 May 2003

ER -

Hot-Wire CVD N-Type Emitter on P-Type Crystalline Si Solar Cells

Abstract

Conference

NREL Publication Number

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