How Deposition Parameters Control Growth Dynamics of nc-Si Deposited by Hot-Wire Chemical Vapor Deposition

H. R. Moutinho; B. To; C. S. Jiang; Y. Xu; B. P. Nelson; C. W. Teplin; K. M. Jones; J. Perkins; M. M. Al-Jassim

doi:10.1116/1.2137331

How Deposition Parameters Control Growth Dynamics of nc-Si Deposited by Hot-Wire Chemical Vapor Deposition

H. R. Moutinho, B. To, C. S. Jiang, Y. Xu, B. P. Nelson, C. W. Teplin, K. M. Jones, J. Perkins, M. M. Al-Jassim

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

9 Scopus Citations

Abstract

We studied the growth of silicon films deposited by hot-wire chemical vapor deposition under different values of filament current, substrate temperature, and hydrogen dilution ratio. The physical and electrical properties of the films were studied by Raman spectroscopy, x-ray diffraction, atomic force microscopy, conductive-atomic force microscopy, and transmission electron microscopy. There is an interdependence of the growth parameters, and films grown with different parameters can have similar structures. We discuss why this interdependence occurs and how it influences the properties of the deposited films, as well as the deposition rate. In general, the films have a complex structure, with a mixture of amorphous, (220)-oriented crystalline and nanocrystalline phases present in most cases. The amount of each phase can be controlled by the variation of one or more of the growth parameters at a time.

Original language	American English
Pages (from-to)	95-102
Number of pages	8
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	24
Issue number	1
DOIs	https://doi.org/10.1116/1.2137331 https://doi.org/10.1116/1.2137331
State	Published - 2006

NREL Publication Number

NREL/JA-520-38197

Keywords

bandgap
filament temperature
hot-wire chemical vapor deposition (HWCVD)
silicon films
solar cells
substrate temperature

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Moutinho, H. R., To, B., Jiang, C. S., Xu, Y., Nelson, B. P., Teplin, C. W., Jones, K. M., Perkins, J., & Al-Jassim, M. M. (2006). How Deposition Parameters Control Growth Dynamics of nc-Si Deposited by Hot-Wire Chemical Vapor Deposition. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 24(1), 95-102. https://doi.org/10.1116/1.2137331, https://doi.org/10.1116/1.2137331

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title = "How Deposition Parameters Control Growth Dynamics of nc-Si Deposited by Hot-Wire Chemical Vapor Deposition",

abstract = "We studied the growth of silicon films deposited by hot-wire chemical vapor deposition under different values of filament current, substrate temperature, and hydrogen dilution ratio. The physical and electrical properties of the films were studied by Raman spectroscopy, x-ray diffraction, atomic force microscopy, conductive-atomic force microscopy, and transmission electron microscopy. There is an interdependence of the growth parameters, and films grown with different parameters can have similar structures. We discuss why this interdependence occurs and how it influences the properties of the deposited films, as well as the deposition rate. In general, the films have a complex structure, with a mixture of amorphous, (220)-oriented crystalline and nanocrystalline phases present in most cases. The amount of each phase can be controlled by the variation of one or more of the growth parameters at a time.",

keywords = "bandgap, filament temperature, hot-wire chemical vapor deposition (HWCVD), silicon films, solar cells, substrate temperature",

author = "Moutinho, {H. R.} and B. To and Jiang, {C. S.} and Y. Xu and Nelson, {B. P.} and Teplin, {C. W.} and Jones, {K. M.} and J. Perkins and Al-Jassim, {M. M.}",

year = "2006",

doi = "10.1116/1.2137331",

language = "American English",

volume = "24",

pages = "95--102",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

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Moutinho, HR, To, B, Jiang, CS, Xu, Y, Nelson, BP, Teplin, CW, Jones, KM, Perkins, J & Al-Jassim, MM 2006, 'How Deposition Parameters Control Growth Dynamics of nc-Si Deposited by Hot-Wire Chemical Vapor Deposition', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 24, no. 1, pp. 95-102. https://doi.org/10.1116/1.2137331, https://doi.org/10.1116/1.2137331

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T1 - How Deposition Parameters Control Growth Dynamics of nc-Si Deposited by Hot-Wire Chemical Vapor Deposition

AU - Moutinho, H. R.

AU - To, B.

AU - Jiang, C. S.

AU - Xu, Y.

AU - Nelson, B. P.

AU - Teplin, C. W.

AU - Jones, K. M.

AU - Perkins, J.

AU - Al-Jassim, M. M.

PY - 2006

Y1 - 2006

N2 - We studied the growth of silicon films deposited by hot-wire chemical vapor deposition under different values of filament current, substrate temperature, and hydrogen dilution ratio. The physical and electrical properties of the films were studied by Raman spectroscopy, x-ray diffraction, atomic force microscopy, conductive-atomic force microscopy, and transmission electron microscopy. There is an interdependence of the growth parameters, and films grown with different parameters can have similar structures. We discuss why this interdependence occurs and how it influences the properties of the deposited films, as well as the deposition rate. In general, the films have a complex structure, with a mixture of amorphous, (220)-oriented crystalline and nanocrystalline phases present in most cases. The amount of each phase can be controlled by the variation of one or more of the growth parameters at a time.

AB - We studied the growth of silicon films deposited by hot-wire chemical vapor deposition under different values of filament current, substrate temperature, and hydrogen dilution ratio. The physical and electrical properties of the films were studied by Raman spectroscopy, x-ray diffraction, atomic force microscopy, conductive-atomic force microscopy, and transmission electron microscopy. There is an interdependence of the growth parameters, and films grown with different parameters can have similar structures. We discuss why this interdependence occurs and how it influences the properties of the deposited films, as well as the deposition rate. In general, the films have a complex structure, with a mixture of amorphous, (220)-oriented crystalline and nanocrystalline phases present in most cases. The amount of each phase can be controlled by the variation of one or more of the growth parameters at a time.

KW - bandgap

KW - filament temperature

KW - hot-wire chemical vapor deposition (HWCVD)

KW - silicon films

KW - solar cells

KW - substrate temperature

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IS - 1

ER -

How Deposition Parameters Control Growth Dynamics of nc-Si Deposited by Hot-Wire Chemical Vapor Deposition

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