Abstract
The present disclosure relates to a device that includes a light source, a detector; and a film having a first surface that includes a transition metal dichalcogenide, where the film is configured to interact with a volume of gas containing a concentration of water vapor, the light source is configured to shine a first light onto the first surface, the film is configured, as a result of the first light, to emit from the first surface a second light, the detector is configured to receive at least a portion of the second light, and the detector is configured to generate a signal proportional to an intensity of the second light.
Original language | American English |
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Patent number | 11,204,321 B2 |
Filing date | 21/12/21 |
State | Published - 2021 |
NREL Publication Number
- NREL/PT-5900-81750
Keywords
- silicon charge coupled device
- transition metal dichalcogenide
- wavelength