HVPE-Grown GaAs//Si Tandem Device Performance

Kaitlyn Vansant, John Simon, Manuel Schnabel, John Geisz, Kevin Schulte, Aaron Ptak, Michelle Young, David Guiling, Waldo Olavarria, Michael Rienaecker, Henning Schulte-Huxel, Raphael Niepelt, Sarah Kajari-Schroeder, Rolf Brendel, Robby Peibst, Adele Tamboli

Research output: Contribution to conferencePaperpeer-review


The performance of III-V//Si tandem devices has successfully exceeded the theoretical efficiency limit of single junction Si devices (29.4%) yet the costs associated with these high-efficiency tandem devices are still too high to compete with today's conventional Si solar cells. Recent cost modeling efforts suggest that hydride vapor phase epitaxy (HVPE) could be adopted as an alternative growth technique to metal-organic chemical vapor deposition (MOCVD) because the costs of HVPE are substantially lower and the performance of devices fabricated from HVPE materials are continuously improving. This study reports on our first results of a HVPE-grown GaAs top cell mechanically stacked on a Si bottom cell.

Original languageAmerican English
Number of pages3
StatePublished - 26 Nov 2018
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: 10 Jun 201815 Jun 2018


Conference7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/TerritoryUnited States
CityWaikoloa Village

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

NREL Publication Number

  • NREL/CP-5900-70845


  • HVPE
  • multi-junction solar cells
  • photovoltaic cells
  • Solar energy
  • tandems


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