HVPE-Grown GaAs//Si Tandem Device Performance

Kaitlyn Vansant; John Simon; Manuel Schnabel; John Geisz; Kevin Schulte; Aaron Ptak; Michelle Young; David Guiling; Waldo Olavarria; Michael Rienaecker; Henning Schulte-Huxel; Raphael Niepelt; Sarah Kajari-Schroeder; Rolf Brendel; Robby Peibst; Adele Tamboli

doi:10.1109/PVSC.2018.8547889

HVPE-Grown GaAs//Si Tandem Device Performance

Kaitlyn Vansant, John Simon, Manuel Schnabel, John Geisz, Kevin Schulte, Aaron Ptak, Michelle Young, David Guiling, Waldo Olavarria, Michael Rienaecker, Henning Schulte-Huxel, Raphael Niepelt, Sarah Kajari-Schroeder, Rolf Brendel, Robby Peibst, Adele Tamboli

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

Abstract

The performance of III-V//Si tandem devices has successfully exceeded the theoretical efficiency limit of single junction Si devices (29.4%) yet the costs associated with these high-efficiency tandem devices are still too high to compete with today's conventional Si solar cells. Recent cost modeling efforts suggest that hydride vapor phase epitaxy (HVPE) could be adopted as an alternative growth technique to metal-organic chemical vapor deposition (MOCVD) because the costs of HVPE are substantially lower and the performance of devices fabricated from HVPE materials are continuously improving. This study reports on our first results of a HVPE-grown GaAs top cell mechanically stacked on a Si bottom cell.

Original language	American English
Pages	2776-2778
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2018.8547889 https://doi.org/10.1109/PVSC.2018.8547889
State	Published - 26 Nov 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018

Conference

Conference	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	10/06/18 → 15/06/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

NREL Publication Number

NREL/CP-5900-70845

Keywords

HVPE
MOCVD
multi-junction solar cells
photovoltaic cells
Solar energy
tandems

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Vansant, K., Simon, J., Schnabel, M., Geisz, J., Schulte, K., Ptak, A., Young, M., Guiling, D., Olavarria, W., Rienaecker, M., Schulte-Huxel, H., Niepelt, R., Kajari-Schroeder, S., Brendel, R., Peibst, R., & Tamboli, A. (2018). HVPE-Grown GaAs//Si Tandem Device Performance. 2776-2778. Paper presented at 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States. https://doi.org/10.1109/PVSC.2018.8547889, https://doi.org/10.1109/PVSC.2018.8547889

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title = "HVPE-Grown GaAs//Si Tandem Device Performance",

abstract = "The performance of III-V//Si tandem devices has successfully exceeded the theoretical efficiency limit of single junction Si devices (29.4%) yet the costs associated with these high-efficiency tandem devices are still too high to compete with today's conventional Si solar cells. Recent cost modeling efforts suggest that hydride vapor phase epitaxy (HVPE) could be adopted as an alternative growth technique to metal-organic chemical vapor deposition (MOCVD) because the costs of HVPE are substantially lower and the performance of devices fabricated from HVPE materials are continuously improving. This study reports on our first results of a HVPE-grown GaAs top cell mechanically stacked on a Si bottom cell.",

keywords = "HVPE, MOCVD, multi-junction solar cells, photovoltaic cells, Solar energy, tandems",

author = "Kaitlyn Vansant and John Simon and Manuel Schnabel and John Geisz and Kevin Schulte and Aaron Ptak and Michelle Young and David Guiling and Waldo Olavarria and Michael Rienaecker and Henning Schulte-Huxel and Raphael Niepelt and Sarah Kajari-Schroeder and Rolf Brendel and Robby Peibst and Adele Tamboli",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

year = "2018",

month = nov,

day = "26",

doi = "10.1109/PVSC.2018.8547889",

language = "American English",

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Vansant, K , Simon, J, Schnabel, M, Geisz, J , Schulte, K , Ptak, A , Young, M , Guiling, D, Olavarria, W, Rienaecker, M, Schulte-Huxel, H, Niepelt, R, Kajari-Schroeder, S, Brendel, R, Peibst, R & Tamboli, A 2018, 'HVPE-Grown GaAs//Si Tandem Device Performance', Paper presented at 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 10/06/18 - 15/06/18 pp. 2776-2778. https://doi.org/10.1109/PVSC.2018.8547889, https://doi.org/10.1109/PVSC.2018.8547889

TY - CONF

T1 - HVPE-Grown GaAs//Si Tandem Device Performance

AU - Vansant, Kaitlyn

AU - Simon, John

AU - Schnabel, Manuel

AU - Geisz, John

AU - Schulte, Kevin

AU - Ptak, Aaron

AU - Young, Michelle

AU - Guiling, David

AU - Olavarria, Waldo

AU - Rienaecker, Michael

AU - Schulte-Huxel, Henning

AU - Niepelt, Raphael

AU - Kajari-Schroeder, Sarah

AU - Brendel, Rolf

AU - Peibst, Robby

AU - Tamboli, Adele

PY - 2018/11/26

Y1 - 2018/11/26

N2 - The performance of III-V//Si tandem devices has successfully exceeded the theoretical efficiency limit of single junction Si devices (29.4%) yet the costs associated with these high-efficiency tandem devices are still too high to compete with today's conventional Si solar cells. Recent cost modeling efforts suggest that hydride vapor phase epitaxy (HVPE) could be adopted as an alternative growth technique to metal-organic chemical vapor deposition (MOCVD) because the costs of HVPE are substantially lower and the performance of devices fabricated from HVPE materials are continuously improving. This study reports on our first results of a HVPE-grown GaAs top cell mechanically stacked on a Si bottom cell.

AB - The performance of III-V//Si tandem devices has successfully exceeded the theoretical efficiency limit of single junction Si devices (29.4%) yet the costs associated with these high-efficiency tandem devices are still too high to compete with today's conventional Si solar cells. Recent cost modeling efforts suggest that hydride vapor phase epitaxy (HVPE) could be adopted as an alternative growth technique to metal-organic chemical vapor deposition (MOCVD) because the costs of HVPE are substantially lower and the performance of devices fabricated from HVPE materials are continuously improving. This study reports on our first results of a HVPE-grown GaAs top cell mechanically stacked on a Si bottom cell.

KW - HVPE

KW - MOCVD

KW - multi-junction solar cells

KW - photovoltaic cells

KW - Solar energy

KW - tandems

UR - http://www.scopus.com/inward/record.url?scp=85059907962&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2018.8547889

DO - 10.1109/PVSC.2018.8547889

M3 - Paper

AN - SCOPUS:85059907962

SP - 2776

EP - 2778

T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -

HVPE-Grown GaAs//Si Tandem Device Performance

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

Access to Document

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