Hybridization-Induced Carrier Localization at the C60/ZnO Interface

Leah L. Kelly; David A. Racke; Hyungchul Kim; Paul Ndione; Ajaya K. Sigdel; Joseph J. Berry; Samuel Graham; Dennis Nordlund; Oliver L.A. Monti

doi:10.1002/adma.201503694

Hybridization-Induced Carrier Localization at the C60/ZnO Interface

Leah L. Kelly
, David A. Racke
, Hyungchul Kim
, Paul Ndione
, Ajaya K. Sigdel
, Joseph J. Berry
, Samuel Graham
, Dennis Nordlund
, Oliver L.A. Monti

Research output: Contribution to journal › Article › peer-review

13 Scopus Citations

Abstract

Electronic coupling and ground-state charge transfer at the C₆₀/ZnO hybrid interface is shown to localize carriers in the C₆₀ phase. This effect, revealed by resonant X-ray photoemission, arises from interfacial hybridization between C₆₀ and ZnO. Such localization at carrier-selective electrodes and interlayers may lead to severely reduced carrier harvesting efficiencies and increased recombination rates in organic electronic devices.

Original language	American English
Pages (from-to)	3960-3965
Number of pages	6
Journal	Advanced Materials
Volume	28
Issue number	20
DOIs	https://doi.org/10.1002/adma.201503694 https://doi.org/10.1002/adma.201503694
State	Published - 2016

Bibliographical note

Publisher Copyright:
© 2015 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

NLR Publication Number

NREL/JA-5K00-65818

Keywords

charge transfer
hybrid organic/inorganic interfaces
hybridization
resonant photoemission spectroscopy
ultrafast carrier dynamics

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@article{20563083940b4f22b00380ec94fa7134,

title = "Hybridization-Induced Carrier Localization at the C60/ZnO Interface",

abstract = "Electronic coupling and ground-state charge transfer at the C60/ZnO hybrid interface is shown to localize carriers in the C60 phase. This effect, revealed by resonant X-ray photoemission, arises from interfacial hybridization between C60 and ZnO. Such localization at carrier-selective electrodes and interlayers may lead to severely reduced carrier harvesting efficiencies and increased recombination rates in organic electronic devices.",

keywords = "charge transfer, hybrid organic/inorganic interfaces, hybridization, resonant photoemission spectroscopy, ultrafast carrier dynamics",

author = "Kelly, \{Leah L.\} and Racke, \{David A.\} and Hyungchul Kim and Paul Ndione and Sigdel, \{Ajaya K.\} and Berry, \{Joseph J.\} and Samuel Graham and Dennis Nordlund and Monti, \{Oliver L.A.\}",

note = "Publisher Copyright: {\textcopyright} 2015 Wiley-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2016",

doi = "10.1002/adma.201503694",

language = "American English",

volume = "28",

pages = "3960--3965",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "20",

}

TY - JOUR

T1 - Hybridization-Induced Carrier Localization at the C60/ZnO Interface

AU - Kelly, Leah L.

AU - Racke, David A.

AU - Kim, Hyungchul

AU - Ndione, Paul

AU - Sigdel, Ajaya K.

AU - Berry, Joseph J.

AU - Graham, Samuel

AU - Nordlund, Dennis

AU - Monti, Oliver L.A.

PY - 2016

Y1 - 2016

N2 - Electronic coupling and ground-state charge transfer at the C60/ZnO hybrid interface is shown to localize carriers in the C60 phase. This effect, revealed by resonant X-ray photoemission, arises from interfacial hybridization between C60 and ZnO. Such localization at carrier-selective electrodes and interlayers may lead to severely reduced carrier harvesting efficiencies and increased recombination rates in organic electronic devices.

AB - Electronic coupling and ground-state charge transfer at the C60/ZnO hybrid interface is shown to localize carriers in the C60 phase. This effect, revealed by resonant X-ray photoemission, arises from interfacial hybridization between C60 and ZnO. Such localization at carrier-selective electrodes and interlayers may lead to severely reduced carrier harvesting efficiencies and increased recombination rates in organic electronic devices.

KW - charge transfer

KW - hybrid organic/inorganic interfaces

KW - hybridization

KW - resonant photoemission spectroscopy

KW - ultrafast carrier dynamics

UR - https://www.scopus.com/pages/publications/84947983329

U2 - 10.1002/adma.201503694

DO - 10.1002/adma.201503694

M3 - Article

AN - SCOPUS:84947983329

SN - 0935-9648

VL - 28

SP - 3960

EP - 3965

JO - Advanced Materials

JF - Advanced Materials

IS - 20

ER -

Hybridization-Induced Carrier Localization at the C60/ZnO Interface

Abstract

Bibliographical note

NLR Publication Number

Keywords

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