Hydride Enhanced Growth Rates in Hydride Vapor Phase Epitaxy

Kevin Schulte (Inventor), Aaron Ptak (Inventor), John Simon (Inventor)

Research output: Patent


Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HYPE).
Original languageAmerican English
Patent number10,903,389 B2
Filing date26/01/21
StatePublished - 2021

NREL Publication Number

  • NREL/PT-5900-79024


  • close-­spaced vapor transport
  • CSVT
  • high-growth-rate metalorganic vapor phase epitaxy
  • hydride vapor phase epitaxy
  • HYPE
  • III-V based solar cells
  • single junction GaAs solar cells


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