Hydride Enhanced Growth Rates in Hydride Vapor Phase Epitaxy

Kevin Schulte; Aaron Ptak; John Simon

Hydride Enhanced Growth Rates in Hydride Vapor Phase Epitaxy

Kevin Schulte (Inventor), Aaron Ptak (Inventor), John Simon (Inventor)

Chemistry and Nanoscience

Research output: Patent

Abstract

Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HYPE).

Original language	American English
Patent number	10,903,389 B2
Filing date	26/01/21
State	Published - 2021

NREL Publication Number

NREL/PT-5900-79024

Keywords

close-spaced vapor transport
CSVT
high-growth-rate metalorganic vapor phase epitaxy
hydride vapor phase epitaxy
HYPE
III-V based solar cells
MOVPE
single junction GaAs solar cells

Access to Document

https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/10903389

Cite this

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title = "Hydride Enhanced Growth Rates in Hydride Vapor Phase Epitaxy",

abstract = "Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HYPE).",

keywords = "close-spaced vapor transport, CSVT, high-growth-rate metalorganic vapor phase epitaxy, hydride vapor phase epitaxy, HYPE, III-V based solar cells, MOVPE, single junction GaAs solar cells",

author = "Kevin Schulte and Aaron Ptak and John Simon",

year = "2021",

language = "American English",

type = "Patent",

note = "10,903,389 B2",

}

TY - PAT

T1 - Hydride Enhanced Growth Rates in Hydride Vapor Phase Epitaxy

AU - Schulte, Kevin

AU - Ptak, Aaron

AU - Simon, John

PY - 2021

Y1 - 2021

N2 - Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HYPE).

AB - Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HYPE).

KW - close-spaced vapor transport

KW - CSVT

KW - high-growth-rate metalorganic vapor phase epitaxy

KW - hydride vapor phase epitaxy

KW - HYPE

KW - III-V based solar cells

KW - MOVPE

KW - single junction GaAs solar cells

M3 - Patent

M1 - 10,903,389 B2

Y2 - 2021/01/26

ER -

Hydride Enhanced Growth Rates in Hydride Vapor Phase Epitaxy

Abstract

NREL Publication Number

Keywords

Access to Document

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Cite this