Hydrogen Diffusion in Silicon from Plasma-Enhanced Chemical Vapor Deposited Silicon Nitride Film at High Temperature

Manav Sheoran, Dong Seop Kim, Ajeet Rohatgi, H. F.W. Dekkers, G. Beaucarne, Matthew Young, Sally Asher

Research output: Contribution to journalArticlepeer-review

41 Scopus Citations

Abstract

The stable hydrogen isotope deuterium (D), which is released during the annealing of deuterated silicon nitride films, diffuses through the crystalline silicon and is captured by a thin, amorphous layer of silicon sputtered on the rear surface. We report on the measurement of the concentration of "penetrated" D by secondary ion mass spectrometry to monitor the flux of D diffusing through single-crystalline silicon wafers. The penetrated D content in the trapping layer increases with the annealing time. However, the flux of D injected into the silicon from the silicon nitride layer decreases as annealing time increases.

Original languageAmerican English
Article numberArticle No. 172107
Number of pages3
JournalApplied Physics Letters
Volume92
Issue number17
DOIs
StatePublished - 2008

NREL Publication Number

  • NREL/JA-520-43463

Keywords

  • photovoltaics
  • silicon solar cells

Fingerprint

Dive into the research topics of 'Hydrogen Diffusion in Silicon from Plasma-Enhanced Chemical Vapor Deposited Silicon Nitride Film at High Temperature'. Together they form a unique fingerprint.

Cite this