Hydrogen Distribution in High Stability a-Si:H Prepared by the Hot Wire Technique

Hydrogen Distribution in High Stability a-Si:H Prepared by the Hot Wire Technique

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Abstract

In this work the microstructures of 2-3 hydrogen at.% hot-wire CVD a-Si:H films were characterized by 1H nuclear magnetic resonance (NMR). Significant differences were found between the hydrogen distribution in these samples and that in conventional plasma-enhanced CVD samples. Among other things, the broad resonance line in the hot-wire a-Si:H is 50 kHz wide, which is much broader than thatobserved 25-35 kHz in PECVD a-Si:H films. Moreover, a 0.5 kHz resonance absorption hole width due to intrinsic dipolar interactions is obtained using the hole-burning technique. Surprisingly, approximately 90 percent of the hydrogen atoms give rise to the 50 kHz line and only a very small percentage of the hydrogen atoms give rise to the much narrower resonance line.

Original language	American English
Pages	485-490
Number of pages	6
State	Published - 1996
Event	Amorphous Silicon Technology 1996: Materials Research Society Symposium - San Francisco, California Duration: 8 Apr 1996 → 12 Apr 1996

Conference

Conference	Amorphous Silicon Technology 1996: Materials Research Society Symposium
City	San Francisco, California
Period	8/04/96 → 12/04/96

NREL Publication Number

NREL/CP-23024

Cite this

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title = "Hydrogen Distribution in High Stability a-Si:H Prepared by the Hot Wire Technique",

abstract = "In this work the microstructures of 2-3 hydrogen at.% hot-wire CVD a-Si:H films were characterized by 1H nuclear magnetic resonance (NMR). Significant differences were found between the hydrogen distribution in these samples and that in conventional plasma-enhanced CVD samples. Among other things, the broad resonance line in the hot-wire a-Si:H is 50 kHz wide, which is much broader than thatobserved 25-35 kHz in PECVD a-Si:H films. Moreover, a 0.5 kHz resonance absorption hole width due to intrinsic dipolar interactions is obtained using the hole-burning technique. Surprisingly, approximately 90 percent of the hydrogen atoms give rise to the 50 kHz line and only a very small percentage of the hydrogen atoms give rise to the much narrower resonance line.",

author = "NREL",

year = "1996",

language = "American English",

pages = "485--490",

note = "Amorphous Silicon Technology 1996: Materials Research Society Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

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TY - CONF

T1 - Hydrogen Distribution in High Stability a-Si:H Prepared by the Hot Wire Technique

AU - NREL, null

PY - 1996

Y1 - 1996

N2 - In this work the microstructures of 2-3 hydrogen at.% hot-wire CVD a-Si:H films were characterized by 1H nuclear magnetic resonance (NMR). Significant differences were found between the hydrogen distribution in these samples and that in conventional plasma-enhanced CVD samples. Among other things, the broad resonance line in the hot-wire a-Si:H is 50 kHz wide, which is much broader than thatobserved 25-35 kHz in PECVD a-Si:H films. Moreover, a 0.5 kHz resonance absorption hole width due to intrinsic dipolar interactions is obtained using the hole-burning technique. Surprisingly, approximately 90 percent of the hydrogen atoms give rise to the 50 kHz line and only a very small percentage of the hydrogen atoms give rise to the much narrower resonance line.

AB - In this work the microstructures of 2-3 hydrogen at.% hot-wire CVD a-Si:H films were characterized by 1H nuclear magnetic resonance (NMR). Significant differences were found between the hydrogen distribution in these samples and that in conventional plasma-enhanced CVD samples. Among other things, the broad resonance line in the hot-wire a-Si:H is 50 kHz wide, which is much broader than thatobserved 25-35 kHz in PECVD a-Si:H films. Moreover, a 0.5 kHz resonance absorption hole width due to intrinsic dipolar interactions is obtained using the hole-burning technique. Surprisingly, approximately 90 percent of the hydrogen atoms give rise to the 50 kHz line and only a very small percentage of the hydrogen atoms give rise to the much narrower resonance line.

M3 - Paper

SP - 485

EP - 490

T2 - Amorphous Silicon Technology 1996: Materials Research Society Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Hydrogen Distribution in High Stability a-Si:H Prepared by the Hot Wire Technique

Abstract

Conference

NREL Publication Number

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