Hydrogen Passivation and Junction Formation on APIVT-Deposited Thin-Layer Silicon by Hot-Wire CVD

T. H. Wang; Q. Wang; M. R. Page; R. E. Bauer; T. F. Ciszek

doi:10.1016/S0040-6090(03)00125-1

Hydrogen Passivation and Junction Formation on APIVT-Deposited Thin-Layer Silicon by Hot-Wire CVD

T. H. Wang, Q. Wang, M. R. Page, R. E. Bauer, T. F. Ciszek

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

2 Scopus Citations

Abstract

The hot-wire chemical vapor deposition (HWCVD) technique was employed to deposit μc-Si emitters and a-SiN_x:H passivation/antireflection films, and to hydrogenate silicon thin layers grown by atmospheric-pressure iodine vapor transport (APIVT). Photovoltaic devices with HWCVD μc-Si emitters on APIVT epitaxial silicon exhibit greater than 8% efficiency, similar to those made with diffused junctions. On polycrystalline APIVT-Si layers, a HWCVD-deposited μc-Si emitter reduces open-circuit voltage loss caused by grain boundaries. Hot-wire hydrogenation improves Hall mobility by approximately 50%. HWCVD a-SiN_x:H films improve minority-carrier lifetime significantly after thermal annealing at temperatures up to 500 °C.

Original language	American English
Pages (from-to)	261-264
Number of pages	4
Journal	Thin Solid Films
Volume	430
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(03)00125-1 https://doi.org/10.1016/S0040-6090(03)00125-1
State	Published - 2003
Event	Proceedings of the Second International Conference on CAT-CVD - Denver, CO, United States Duration: 10 Sep 2002 → 13 Sep 2002

NREL Publication Number

NREL/JA-520-33240

Keywords

APIVT-silicon deposition
Heterojunction formation
Hot-wire CVD
Silicon nitride

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title = "Hydrogen Passivation and Junction Formation on APIVT-Deposited Thin-Layer Silicon by Hot-Wire CVD",

abstract = "The hot-wire chemical vapor deposition (HWCVD) technique was employed to deposit μc-Si emitters and a-SiNx:H passivation/antireflection films, and to hydrogenate silicon thin layers grown by atmospheric-pressure iodine vapor transport (APIVT). Photovoltaic devices with HWCVD μc-Si emitters on APIVT epitaxial silicon exhibit greater than 8% efficiency, similar to those made with diffused junctions. On polycrystalline APIVT-Si layers, a HWCVD-deposited μc-Si emitter reduces open-circuit voltage loss caused by grain boundaries. Hot-wire hydrogenation improves Hall mobility by approximately 50%. HWCVD a-SiNx:H films improve minority-carrier lifetime significantly after thermal annealing at temperatures up to 500 °C.",

keywords = "APIVT-silicon deposition, Heterojunction formation, Hot-wire CVD, Silicon nitride",

author = "Wang, {T. H.} and Q. Wang and Page, {M. R.} and Bauer, {R. E.} and Ciszek, {T. F.}",

year = "2003",

doi = "10.1016/S0040-6090(03)00125-1",

language = "American English",

volume = "430",

pages = "261--264",

journal = "Thin Solid Films",

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number = "1-2",

note = "Proceedings of the Second International Conference on CAT-CVD ; Conference date: 10-09-2002 Through 13-09-2002",

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TY - JOUR

T1 - Hydrogen Passivation and Junction Formation on APIVT-Deposited Thin-Layer Silicon by Hot-Wire CVD

AU - Wang, T. H.

AU - Wang, Q.

AU - Page, M. R.

AU - Bauer, R. E.

AU - Ciszek, T. F.

PY - 2003

Y1 - 2003

N2 - The hot-wire chemical vapor deposition (HWCVD) technique was employed to deposit μc-Si emitters and a-SiNx:H passivation/antireflection films, and to hydrogenate silicon thin layers grown by atmospheric-pressure iodine vapor transport (APIVT). Photovoltaic devices with HWCVD μc-Si emitters on APIVT epitaxial silicon exhibit greater than 8% efficiency, similar to those made with diffused junctions. On polycrystalline APIVT-Si layers, a HWCVD-deposited μc-Si emitter reduces open-circuit voltage loss caused by grain boundaries. Hot-wire hydrogenation improves Hall mobility by approximately 50%. HWCVD a-SiNx:H films improve minority-carrier lifetime significantly after thermal annealing at temperatures up to 500 °C.

AB - The hot-wire chemical vapor deposition (HWCVD) technique was employed to deposit μc-Si emitters and a-SiNx:H passivation/antireflection films, and to hydrogenate silicon thin layers grown by atmospheric-pressure iodine vapor transport (APIVT). Photovoltaic devices with HWCVD μc-Si emitters on APIVT epitaxial silicon exhibit greater than 8% efficiency, similar to those made with diffused junctions. On polycrystalline APIVT-Si layers, a HWCVD-deposited μc-Si emitter reduces open-circuit voltage loss caused by grain boundaries. Hot-wire hydrogenation improves Hall mobility by approximately 50%. HWCVD a-SiNx:H films improve minority-carrier lifetime significantly after thermal annealing at temperatures up to 500 °C.

KW - APIVT-silicon deposition

KW - Heterojunction formation

KW - Hot-wire CVD

KW - Silicon nitride

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U2 - 10.1016/S0040-6090(03)00125-1

DO - 10.1016/S0040-6090(03)00125-1

M3 - Article

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SN - 0040-6090

VL - 430

SP - 261

EP - 264

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - Proceedings of the Second International Conference on CAT-CVD

Y2 - 10 September 2002 through 13 September 2002

ER -

Hydrogen Passivation and Junction Formation on APIVT-Deposited Thin-Layer Silicon by Hot-Wire CVD

Abstract

NREL Publication Number

Keywords

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