Hydrogen Structures and the Optoelectronic Properties in Transition Films from Amorphous to Microcrystalline Silicon Prepared by Hot-Wire Chemical Vapor Deposition

Daxing Han; Keda Wang; Jessica M. Owens; Lynn Gedvilas; Brent Nelson; Hitoe Habuchi; Masako Tanaka

doi:10.1063/1.1555680

Hydrogen Structures and the Optoelectronic Properties in Transition Films from Amorphous to Microcrystalline Silicon Prepared by Hot-Wire Chemical Vapor Deposition

Daxing Han, Keda Wang, Jessica M. Owens, Lynn Gedvilas, Brent Nelson, Hitoe Habuchi, Masako Tanaka

Materials, Chemical, and Computational Science Research Operations

Research output: Contribution to journal › Article › peer-review

112 Scopus Citations

Abstract

The importance of hydrogen structures and optoelectronic properties in transition films from amorphous to microcrystalline silicon, made by hot-wire chemical vapor deposition (CVD), were discussed. Infrared absorption, optical absorption, photoluminescence, and conductivity temperature dependence were used to investigate the properties of the material. For all the films, the peak frequency of SiH wag mode was at 630-640 cm^-1.

Original language	American English
Pages (from-to)	3776-3783
Number of pages	8
Journal	Journal of Applied Physics
Volume	93
Issue number	7
DOIs	https://doi.org/10.1063/1.1555680 https://doi.org/10.1063/1.1555680
State	Published - 2003

NREL Publication Number

NREL/JA-520-34427

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Han, D., Wang, K., Owens, J. M., Gedvilas, L., Nelson, B., Habuchi, H., & Tanaka, M. (2003). Hydrogen Structures and the Optoelectronic Properties in Transition Films from Amorphous to Microcrystalline Silicon Prepared by Hot-Wire Chemical Vapor Deposition. Journal of Applied Physics, 93(7), 3776-3783. https://doi.org/10.1063/1.1555680, https://doi.org/10.1063/1.1555680

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Han, D, Wang, K, Owens, JM, Gedvilas, L, Nelson, B, Habuchi, H & Tanaka, M 2003, 'Hydrogen Structures and the Optoelectronic Properties in Transition Films from Amorphous to Microcrystalline Silicon Prepared by Hot-Wire Chemical Vapor Deposition', Journal of Applied Physics, vol. 93, no. 7, pp. 3776-3783. https://doi.org/10.1063/1.1555680, https://doi.org/10.1063/1.1555680

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AU - Han, Daxing

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AU - Gedvilas, Lynn

AU - Nelson, Brent

AU - Habuchi, Hitoe

AU - Tanaka, Masako

PY - 2003

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AB - The importance of hydrogen structures and optoelectronic properties in transition films from amorphous to microcrystalline silicon, made by hot-wire chemical vapor deposition (CVD), were discussed. Infrared absorption, optical absorption, photoluminescence, and conductivity temperature dependence were used to investigate the properties of the material. For all the films, the peak frequency of SiH wag mode was at 630-640 cm-1.

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Hydrogen Structures and the Optoelectronic Properties in Transition Films from Amorphous to Microcrystalline Silicon Prepared by Hot-Wire Chemical Vapor Deposition

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