Hydrogenation of GaAs on Si: Effects on Diode Reverse Leakage Current

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)496-498
    Number of pages3
    JournalApplied Physics Letters
    Issue number7
    StatePublished - 1987

    Bibliographical note

    Work performed by AT&T Bell Laboratories, Murray Hill, New Jersey and Spire Corporation, Bedford, Massachusetts

    NREL Publication Number

    • ACNR/JA-9549

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