Hydrogenation of GaAs on Si: Effects on Diode Reverse Leakage Current

Research output: Contribution to journal › Article

Work performed by AT&T Bell Laboratories, Murray Hill, New Jersey and Spire Corporation, Bedford, Massachusetts

NLR Publication Number

@article{e9ea42ea90a1400c9ba4deb1ec2395ac,

title = "Hydrogenation of GaAs on Si: Effects on Diode Reverse Leakage Current",

author = "NREL",

note = "Work performed by AT\&T Bell Laboratories, Murray Hill, New Jersey and Spire Corporation, Bedford, Massachusetts",

year = "1987",

doi = "10.1063/1.98378",

language = "American English",

volume = "51",

pages = "496--498",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Hydrogenation of GaAs on Si: Effects on Diode Reverse Leakage Current

AU - NREL, null

N1 - Work performed by AT&T Bell Laboratories, Murray Hill, New Jersey and Spire Corporation, Bedford, Massachusetts

PY - 1987

Y1 - 1987

U2 - 10.1063/1.98378

DO - 10.1063/1.98378

M3 - Article

SN - 0003-6951

VL - 51

SP - 496

EP - 498

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -