Identification of Deep-Gap States in a-Si:H by Photodepopulation-Induced Electron-Spin Resonance

Research output: Contribution to journal › Article

Work performed by Xerox Palo Alto Research Center, Palo Alto, California

NREL Publication Number

@article{2d5e30a34011406fadf1057e4231a97e,

title = "Identification of Deep-Gap States in a-Si:H by Photodepopulation-Induced Electron-Spin Resonance",

author = "NREL",

note = "Work performed by Xerox Palo Alto Research Center, Palo Alto, California",

year = "1985",

doi = "10.1103/PhysRevB.31.4066",

language = "American English",

volume = "31",

pages = "4066--4069",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Identification of Deep-Gap States in a-Si:H by Photodepopulation-Induced Electron-Spin Resonance

AU - NREL, null

N1 - Work performed by Xerox Palo Alto Research Center, Palo Alto, California

PY - 1985

Y1 - 1985

U2 - 10.1103/PhysRevB.31.4066

DO - 10.1103/PhysRevB.31.4066

M3 - Article

SN - 0163-1829

VL - 31

SP - 4066

EP - 4069

JO - Physical Review B

JF - Physical Review B

IS - 6

ER -