II-VI Material Integration With Silicon for Detector and PV Applications

Helio Moutinho, Darius Kuciauskas, Teresa Barnes, T. Gessert, E. Colegrove, B. Stafford, R. Kodama, Wei Gao, R. Reedy, S. Sivananthan

Research output: Contribution to journalArticlepeer-review

6 Scopus Citations


Heteroepitaxial growth of high-quality II-VI-alloy materials on Si substrates is a well-established commercial growth process for infrared (IR) detector devices. However, it has only recently been recognized that these same processes may have important applications for production of high-efficiency photovoltaic devices. This submission reviews the process developments that have enabled effective heteroepitaxy of II-VI alloy materials on lattice-mismatched Si for IR detectors as a foundation to describe recent efforts to apply these insights to the fabrication of multijunction Si/CdZnTe devices with ultimate conversion efficiencies >40%. Reviewed photovoltaic studies include multijunction Si/CdZnTe devices with conversion efficiency of ∼17%, analysis of structural and optoelectrical quality of undoped CdTe epilayer films on Si, and the effect that a Te-rich growth environment has on the structural and optoelectronic quality of both undoped and As-doped heteroepitaxial CdTe.

Original languageAmerican English
Pages (from-to)3391-3402
Number of pages12
JournalMRS Advances
Issue number50
StatePublished - 2016

Bibliographical note

Publisher Copyright:
© Materials Research Society 2016.

NREL Publication Number

  • NREL/JA-5K00-70988


  • alloy materials
  • epitaxy
  • photovoltaics


Dive into the research topics of 'II-VI Material Integration With Silicon for Detector and PV Applications'. Together they form a unique fingerprint.

Cite this