III-N-V Semiconductors for Solar Photovoltaic Applications

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314 Scopus Citations


III-N-V semiconductors are promising materials for use in next-generation multijunction solar cells because these materials can be lattice matched to substrates such as GaAs, Ge and Si, with a range of bandgaps that are complementary to those of other III-V semiconductors. Several potentially high-efficiency multijunction photovoltaic device designs using III-N-V materials are discussed. The main roadblock to the development of these solar cell devices is poor minority-carder transport in the III-N-V materials. The present understanding of the material properties of GaInNAs lattice matched to GaAs and GaNPAs lattice matched to Si is reviewed.

Original languageAmerican English
Pages (from-to)769-777
Number of pages9
JournalSemiconductor Science and Technology
Issue number8
StatePublished - 2002

NREL Publication Number

  • NREL/JA-520-31507


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