Abstract
Using a band-structure method that includes bandgap correction, we study the chemical trends of the bandgap variation in III-V semiconductors and predict that the bandgap for InN is 0.85 ? 0.1 eV. This result suggests that InN and its III-nitride alloys are suitable for photovoltaic applications. The unusually small bandgap for InN is explained in terms of the atomic energies and the bandgapdeformation potentials. The electronic and structural properties of the nitrides and their alloys are also provided.
| Original language | American English |
|---|---|
| Number of pages | 6 |
| State | Published - 2003 |
| Event | National Center for Photovoltaics (NCPV) and Solar Program Review Meeting - Denver, Colorado Duration: 24 Mar 2003 → 26 Mar 2003 |
Conference
| Conference | National Center for Photovoltaics (NCPV) and Solar Program Review Meeting |
|---|---|
| City | Denver, Colorado |
| Period | 24/03/03 → 26/03/03 |
NREL Publication Number
- NREL/CP-590-33560
Keywords
- band structure method
- bandgap variation
- electronic properties
- III-nitride alloys
- III-V semiconductors
- inn
- photovoltaic applications
- structural properties
