III-Nitride Semiconductors for Photovoltaic Applications

Suhuai Wei

Research output: Contribution to conferencePaper


Using a band-structure method that includes bandgap correction, we study the chemical trends of the bandgap variation in III-V semiconductors and predict that the bandgap for InN is 0.85 ? 0.1 eV. This result suggests that InN and its III-nitride alloys are suitable for photovoltaic applications. The unusually small bandgap for InN is explained in terms of the atomic energies and the bandgapdeformation potentials. The electronic and structural properties of the nitrides and their alloys are also provided.
Original languageAmerican English
Number of pages6
StatePublished - 2003
EventNational Center for Photovoltaics (NCPV) and Solar Program Review Meeting - Denver, Colorado
Duration: 24 Mar 200326 Mar 2003


ConferenceNational Center for Photovoltaics (NCPV) and Solar Program Review Meeting
CityDenver, Colorado

NREL Publication Number

  • NREL/CP-590-33560


  • band structure method
  • bandgap variation
  • electronic properties
  • III-nitride alloys
  • III-V semiconductors
  • inn
  • photovoltaic applications
  • structural properties


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