III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy

John Simon, Kevin Schulte, Kelsey Horowitz, David Young, Aaron Ptak, Timothy Remo

Research output: Contribution to journalArticlepeer-review

47 Scopus Citations

Abstract

Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market.

Original languageAmerican English
Article number3
Number of pages14
JournalCrystals
Volume9
Issue number1
DOIs
StatePublished - 2019

Bibliographical note

Publisher Copyright:
© 2018 by the authors. Licensee MDPI, Basel, Switzerland.

NREL Publication Number

  • NREL/JA-5900-70908

Keywords

  • HVPE
  • III-V semiconductors

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