Abstract
Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market.
Original language | American English |
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Article number | 3 |
Number of pages | 14 |
Journal | Crystals |
Volume | 9 |
Issue number | 1 |
DOIs | |
State | Published - 2019 |
Bibliographical note
Publisher Copyright:© 2018 by the authors. Licensee MDPI, Basel, Switzerland.
NREL Publication Number
- NREL/JA-5900-70908
Keywords
- HVPE
- III-V semiconductors