III-V Growth on Silicon Toward a Multijunction Cell

Research output: Contribution to conferencePaper

Abstract

A III-V on Si multijunction solar cell promises high efficiency at relatively low cost. The challenges to epitaxial growth of high-quality III-Vs on Si, though, are extensive. Lattice-matched (LM) dilute-nitride GaNPAs solar cells have been grown on Si, but their performance is limited by defects related to the nitrogen. Advances in the growth of lattice-mismatched (LMM) materials make moretraditional III-Vs, such as GaInP and GaAsP, very attractive for use in multijunction solar cells on silicon.
Original languageAmerican English
Number of pages5
StatePublished - 2005
Event2005 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado
Duration: 7 Nov 200510 Nov 2005

Conference

Conference2005 DOE Solar Energy Technologies Program Review Meeting
CityDenver, Colorado
Period7/11/0510/11/05

Bibliographical note

Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102006-2245; NREL/CD-520-38557)

NREL Publication Number

  • NREL/CP-520-38996

Keywords

  • multi-junction cells
  • NREL
  • photovoltaics (PV)
  • PV
  • silicon
  • solar

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