Abstract
A III-V on Si multijunction solar cell promises high efficiency at relatively low cost. The challenges to epitaxial growth of high-quality III-Vs on Si, though, are extensive. Lattice-matched (LM) dilute-nitride GaNPAs solar cells have been grown on Si, but their performance is limited by defects related to the nitrogen. Advances in the growth of lattice-mismatched (LMM) materials make moretraditional III-Vs, such as GaInP and GaAsP, very attractive for use in multijunction solar cells on silicon.
| Original language | American English |
|---|---|
| Number of pages | 5 |
| State | Published - 2005 |
| Event | 2005 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado Duration: 7 Nov 2005 → 10 Nov 2005 |
Conference
| Conference | 2005 DOE Solar Energy Technologies Program Review Meeting |
|---|---|
| City | Denver, Colorado |
| Period | 7/11/05 → 10/11/05 |
Bibliographical note
Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102006-2245; NREL/CD-520-38557)NREL Publication Number
- NREL/CP-520-38996
Keywords
- multi-junction cells
- NREL
- photovoltaics (PV)
- PV
- silicon
- solar