III-V/Si Tandem Cells Utilizing Interdigitated Back Contact Si Cells and Varying Terminal Configurations

Manuel Schnabel, Michael Rienacker, Agnes Merkle, Talysa Klein, Nikhil Jain, Stephanie Essig, Henning Schulte-Huxel, Emily Warren, Maikel van Hest, John Geisz, Jan Schmidt, Rolf Brendel, Robby Peibst, Paul Stradins, Adele Tamboli

Research output: Contribution to conferencePaperpeer-review

Abstract

Integrating wide-bandgap III-V with Si solar cells has been shown to yield higher efficienciesthan Si alone: As also presented at this conference, four-terminal efficiencies exceeding 32 havebeen attained. In this contribution, independent and electrically connected operation of the subcellsin such tandem cells is examined. The optics of the tandem cell change significantly if a conducting interconnect, rather than an insulating glass slide, is required between the subcells. These effects are studied, and optically optimized structures for different types of tandem cell operation are presented. It is found that minimizing reflection at the conductive interface between the two cells while maintaining conductivity is the key challenge faced in such devices.

Original languageAmerican English
Pages3446-3450
Number of pages5
DOIs
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: 16 Jun 201921 Jun 2019

Conference

Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States
CityChicago
Period16/06/1921/06/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NREL Publication Number

  • NREL/CP-5K00-78469

Keywords

  • glass
  • II-VI semiconductor materials
  • indium tin oxide
  • optical reflection
  • silicon
  • zinc compounds

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