III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers

Adele C. Tamboli, Maikel F.A.M. Van Hest, Myles A. Steiner, Stephanie Essig, Emmett E. Perl, Andrew G. Norman, Nick Bosco, Paul Stradins

Research output: Contribution to journalArticlepeer-review

20 Scopus Citations

Abstract

We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm2 for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga0.5In0.5P/Si tandem solar cells operating at 1 sun or low concentration conditions.

Original languageAmerican English
Article number263904
Number of pages4
JournalApplied Physics Letters
Volume106
Issue number26
DOIs
StatePublished - 29 Jun 2015

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

NREL Publication Number

  • NREL/JA-5J00-64052

Keywords

  • electrical properties
  • III-V semiconductors
  • interface structure
  • sapphire
  • solar cells

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