III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers

Adele C. Tamboli; Maikel F.A.M. Van Hest; Myles A. Steiner; Stephanie Essig; Emmett E. Perl; Andrew G. Norman; Nick Bosco; Paul Stradins

doi:10.1063/1.4923444

III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers

Adele C. Tamboli, Maikel F.A.M. Van Hest, Myles A. Steiner, Stephanie Essig, Emmett E. Perl, Andrew G. Norman, Nick Bosco, Paul Stradins

Research output: Contribution to journal › Article › peer-review

21 Scopus Citations

Abstract

We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm² for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga_0.5In_0.5P/Si tandem solar cells operating at 1 sun or low concentration conditions.

Original language	American English
Article number	263904
Number of pages	4
Journal	Applied Physics Letters
Volume	106
Issue number	26
DOIs	https://doi.org/10.1063/1.4923444 https://doi.org/10.1063/1.4923444
State	Published - 29 Jun 2015

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

NREL Publication Number

NREL/JA-5J00-64052

Keywords

electrical properties
III-V semiconductors
interface structure
sapphire
solar cells

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title = "III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers",

abstract = "We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm2 for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga0.5In0.5P/Si tandem solar cells operating at 1 sun or low concentration conditions.",

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doi = "10.1063/1.4923444",

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AU - Tamboli, Adele C.

AU - Van Hest, Maikel F.A.M.

AU - Steiner, Myles A.

AU - Essig, Stephanie

AU - Perl, Emmett E.

AU - Norman, Andrew G.

AU - Bosco, Nick

AU - Stradins, Paul

PY - 2015/6/29

Y1 - 2015/6/29

N2 - We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm2 for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga0.5In0.5P/Si tandem solar cells operating at 1 sun or low concentration conditions.

AB - We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm2 for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga0.5In0.5P/Si tandem solar cells operating at 1 sun or low concentration conditions.

KW - electrical properties

KW - III-V semiconductors

KW - interface structure

KW - sapphire

KW - solar cells

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ER -

III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers

Abstract

Bibliographical note

NREL Publication Number

Keywords

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