III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers

Adele C. Tamboli; Maikel F.A.M. Van Hest; Myles A. Steiner; Stephanie Essig; Emmett E. Perl; Andrew G. Norman; Nick Bosco; Paul Stradins

doi:10.1063/1.4923444

III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers

Adele C. Tamboli
, Maikel F.A.M. Van Hest
, Myles A. Steiner
, Stephanie Essig
, Emmett E. Perl
, Andrew G. Norman
, Nick Bosco
, Paul Stradins

Research output: Contribution to journal › Article › peer-review

21 Scopus Citations

Abstract

We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm² for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga_0.5In_0.5P/Si tandem solar cells operating at 1 sun or low concentration conditions.

Original language	American English
Article number	263904
Number of pages	4
Journal	Applied Physics Letters
Volume	106
Issue number	26
DOIs	https://doi.org/10.1063/1.4923444 https://doi.org/10.1063/1.4923444
State	Published - 29 Jun 2015

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

NLR Publication Number

NREL/JA-5J00-64052

Keywords

electrical properties
III-V semiconductors
interface structure
sapphire
solar cells

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Cite this

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title = "III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers",

abstract = "We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm2 for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga0.5In0.5P/Si tandem solar cells operating at 1 sun or low concentration conditions.",

keywords = "electrical properties, III-V semiconductors, interface structure, sapphire, solar cells",

author = "Tamboli, \{Adele C.\} and \{Van Hest\}, \{Maikel F.A.M.\} and Steiner, \{Myles A.\} and Stephanie Essig and Perl, \{Emmett E.\} and Norman, \{Andrew G.\} and Nick Bosco and Paul Stradins",

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year = "2015",

month = jun,

day = "29",

doi = "10.1063/1.4923444",

language = "American English",

volume = "106",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers

AU - Tamboli, Adele C.

AU - Van Hest, Maikel F.A.M.

AU - Steiner, Myles A.

AU - Essig, Stephanie

AU - Perl, Emmett E.

AU - Norman, Andrew G.

AU - Bosco, Nick

AU - Stradins, Paul

PY - 2015/6/29

Y1 - 2015/6/29

N2 - We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm2 for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga0.5In0.5P/Si tandem solar cells operating at 1 sun or low concentration conditions.

AB - We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm2 for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga0.5In0.5P/Si tandem solar cells operating at 1 sun or low concentration conditions.

KW - electrical properties

KW - III-V semiconductors

KW - interface structure

KW - sapphire

KW - solar cells

UR - https://www.scopus.com/pages/publications/84936871192

U2 - 10.1063/1.4923444

DO - 10.1063/1.4923444

M3 - Article

AN - SCOPUS:84936871192

SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 263904

ER -

III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers

Abstract

Bibliographical note

NLR Publication Number

Keywords

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