III-V/Silicon Lattice-Matched Tandem Solar Cells

Research output: Contribution to conferencePaper


A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated a monolithic III-V-on-silicon tandem solar cell in which most of the III-V layers are nearly lattice-matched to the silicon substrate. The cell includes a GaNPAs top cell, a GaP-basedtunnel junction (TJ), and a diffused silicon junction formed during the epitaxial growth of GaNP on the silicon substrate. To accomplish this, we have developed techniques for the growth of high crystalline quality lattice-matched GaNPAs on silicon by metal-organic vapor-phase epitaxy.
Original languageAmerican English
Number of pages5
StatePublished - 2005
Event2004 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado
Duration: 25 Oct 200428 Oct 2004


Conference2004 DOE Solar Energy Technologies Program Review Meeting
CityDenver, Colorado

Bibliographical note

Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting, 25-28 October 2004, Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102005-2067; NREL/CD-520-37140)

NREL Publication Number

  • NREL/CP-520-36991


  • crystalline
  • lattice-matched
  • metal-organic vapor-phase epitaxy (MOVPE)
  • PV
  • tandem cells
  • tunnel junctions (TJ)
  • two-junction devices


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