Imaging of Shunts and Junction Breakdown in Multicrystalline Silicon Solar Cells

Nathan J. Call; Steven W. Johnston; Richard K. Ahrenkiel; Manuel J. Romero; Bobby Yang

doi:10.1109/PVSC.2009.5411230

Imaging of Shunts and Junction Breakdown in Multicrystalline Silicon Solar Cells

Nathan J. Call, Steven W. Johnston, Richard K. Ahrenkiel, Manuel J. Romero, Bobby Yang

Materials Science

Research output: Contribution to conference › Paper › peer-review

Abstract

Recently, there has been a great deal of work investigating shunting defects in silicon solar cells. With the advancements in such techniques as DLIT, EL, and PL, shunting behavior can now be correlated to specific locations and specific defects. Shunts, which decrease device performance, are revealed under a reverse applied bias. Many of these shunts also generate a photonic emission under reverse bias, which can be observed with visible and near-IR spectrum detectors. This photonic emission or radiative recombination is often referred to as a visible breakdown emission. We investigate if each type of impurity or crystallographic defect has a unique emission spectra that can be used to identify it.

Original language	American English
Pages	1184-1189
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.2009.5411230 https://doi.org/10.1109/PVSC.2009.5411230
State	Published - 2009
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: 7 Jun 2009 → 12 Jun 2009

Conference

Conference	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	7/06/09 → 12/06/09

NREL Publication Number

NREL/CP-520-46104

Keywords

avalanche breakdown
charge coupled devices
charge-coupled image sensors
crystalline materials
electric breakdown
laboratories
photovoltaic cells
renewable energy resources
shunt (electrical)
silicon

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Call, N. J., Johnston, S. W., Ahrenkiel, R. K., Romero, M. J., & Yang, B. (2009). Imaging of Shunts and Junction Breakdown in Multicrystalline Silicon Solar Cells. 1184-1189. Paper presented at 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States. https://doi.org/10.1109/PVSC.2009.5411230, https://doi.org/10.1109/PVSC.2009.5411230

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title = "Imaging of Shunts and Junction Breakdown in Multicrystalline Silicon Solar Cells",

abstract = "Recently, there has been a great deal of work investigating shunting defects in silicon solar cells. With the advancements in such techniques as DLIT, EL, and PL, shunting behavior can now be correlated to specific locations and specific defects. Shunts, which decrease device performance, are revealed under a reverse applied bias. Many of these shunts also generate a photonic emission under reverse bias, which can be observed with visible and near-IR spectrum detectors. This photonic emission or radiative recombination is often referred to as a visible breakdown emission. We investigate if each type of impurity or crystallographic defect has a unique emission spectra that can be used to identify it.",

keywords = "avalanche breakdown, charge coupled devices, charge-coupled image sensors, crystalline materials, electric breakdown, laboratories, photovoltaic cells, renewable energy resources, shunt (electrical), silicon",

author = "Call, {Nathan J.} and Johnston, {Steven W.} and Ahrenkiel, {Richard K.} and Romero, {Manuel J.} and Bobby Yang",

year = "2009",

doi = "10.1109/PVSC.2009.5411230",

language = "American English",

pages = "1184--1189",

note = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

}

Call, NJ, Johnston, SW , Ahrenkiel, RK, Romero, MJ & Yang, B 2009, 'Imaging of Shunts and Junction Breakdown in Multicrystalline Silicon Solar Cells', Paper presented at 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 7/06/09 - 12/06/09 pp. 1184-1189. https://doi.org/10.1109/PVSC.2009.5411230, https://doi.org/10.1109/PVSC.2009.5411230

TY - CONF

T1 - Imaging of Shunts and Junction Breakdown in Multicrystalline Silicon Solar Cells

AU - Call, Nathan J.

AU - Johnston, Steven W.

AU - Ahrenkiel, Richard K.

AU - Romero, Manuel J.

AU - Yang, Bobby

PY - 2009

Y1 - 2009

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AB - Recently, there has been a great deal of work investigating shunting defects in silicon solar cells. With the advancements in such techniques as DLIT, EL, and PL, shunting behavior can now be correlated to specific locations and specific defects. Shunts, which decrease device performance, are revealed under a reverse applied bias. Many of these shunts also generate a photonic emission under reverse bias, which can be observed with visible and near-IR spectrum detectors. This photonic emission or radiative recombination is often referred to as a visible breakdown emission. We investigate if each type of impurity or crystallographic defect has a unique emission spectra that can be used to identify it.

KW - avalanche breakdown

KW - charge coupled devices

KW - charge-coupled image sensors

KW - crystalline materials

KW - electric breakdown

KW - laboratories

KW - photovoltaic cells

KW - renewable energy resources

KW - shunt (electrical)

KW - silicon

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DO - 10.1109/PVSC.2009.5411230

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EP - 1189

T2 - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009

Y2 - 7 June 2009 through 12 June 2009

ER -

Imaging of Shunts and Junction Breakdown in Multicrystalline Silicon Solar Cells

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NREL Publication Number

Keywords

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