Abstract
Much of the research on CdSeTe photovoltaics is focused on improving the open-circuit voltage (Voc) of the solar cell. But solar cells operate at the maximum power point (MPP) rather than at Voc. The recombination processes at MPP may be different than those at Voc, and increasing the power output at MPP is the key to advancing efficiency. Here, we introduce a camera-based PL imaging system that enables power loss analysis under operating conditions and across cm-sized areas covering multiple cells. The instrument is demonstrated with CdSeTe devices having efficiencies greater than 19%. An implied current density versus implied voltage (iJV) curve can be produced at each pixel with <20 ..mu..m resolution. We find that regions with high implied open circuit voltage are often those with low implied fill factor, showing that voltage loss analysis at open circuit is not sufficient to understand power losses under operating conditions. Measurement of JV curves as a function of irradiance can also be performed in the system, which allows series resistance-free pseudo JV (pJV) curves to be produced. Comparison of pJV to measured JV and iJV curves allows further analysis of the operational losses, pointing the way to higher efficiency.
| Original language | American English |
|---|---|
| Number of pages | 9 |
| Journal | Solar RRL |
| Volume | 9 |
| Issue number | 21 |
| DOIs | |
| State | Published - 2025 |
NLR Publication Number
- NREL/JA-5900-95106
Keywords
- cadmium selenium telluride
- CdTe
- ERE
- photoluminescence
- voltage loss analysis