Imaging Study of Multi-Crystalline Silicon Wafers Throughout the Manufacturing Process

Steve Johnston, Fei Yan, Katherine Zaunbrecher, Mowafak Al-Jassim, Omar Sidelkheir, Alain Blosse

Research output: Contribution to conferencePaperpeer-review

4 Scopus Citations

Abstract

Imaging techniques are applied to multi-crystalline silicon bricks, wafers at various process steps, and finished solar cells. Photoluminescence (PL) imaging is used to characterize defects and material quality on bricks and wafers. Defect regions within the wafers are influenced by brick position within an ingot and height within the brick. The defect areas in as-cut wafers are compared to imaging results from reverse-bias electroluminescence and dark lock-in thermography and cell parameters of near-neighbor finished cells. Defect areas are also characterized by defect band emissions. The defect areas measured by these techniques on as-cut wafers are shown to correlate to finished cell performance.

Original languageAmerican English
Pages2885-2890
Number of pages6
DOIs
StatePublished - 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: 19 Jun 201124 Jun 2011

Conference

Conference37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/TerritoryUnited States
CitySeattle, WA
Period19/06/1124/06/11

Bibliographical note

See NREL/CP-5200-50724 for preprint

NREL Publication Number

  • NREL/CP-5200-55722

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