Imaging Techniques for the Characterization of Multi-Crystalline Silicon Bricks and Wafers

Imaging techniques are applied to multi-crystalline silicon wafers and solar cells throughout the production process. Photoluminescence imaging, both band-to-band and defect-band, is used to characterize defects and wafer quality at all process steps. These steps include bricks sawn from ingots, wafer sawing, cleaning and texturing, emitter diffusion, edge isolation and glass removal, anti-reflective coating/passivation, and metallization of finished cells. Bricks, wafers, and cells can be imaged at a rate commensurate with in-line measurement, giving spatial information to characterize quality and defect content. Photoluminescence images on silicon bricks can be correlated to lifetime measured by photoconductive decay and could be used for high-resolution characterization of material before wafers are cut. The defect areas in as-cut wafers are compared to imaging results from electroluminescence and lock-in thermography, and cell parameters of near-neighbor finished cells, showing correlations to efficiency, open-circuit voltage, and short-circuit current.