Impact of Accelerated StressTests on SiC MOSFET Precursor Parameters: Preprint

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Failure Mechanism 100%
• Power Electronics 50%
• Illustrates 50%
• System Reliability 50%
• Electronic Power Circuit 50%
• Gate Bias 50%
• Systems Performance 50%

Material Science

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Electronic Circuit 50%
• Thermal Cycling 50%