Impact of Bulk Properties and Local Secondary Phases on the Cu2(Zn,Sn)Se4 Solar Cells Open-Circuit Voltage

Ana Kanevce; Ingrid Repins; Suhuai Wei

doi:10.1016/j.solmat.2014.10.042

Impact of Bulk Properties and Local Secondary Phases on the Cu2(Zn,Sn)Se4 Solar Cells Open-Circuit Voltage

Ana Kanevce, Ingrid Repins, Suhuai Wei

Materials Science

Research output: Contribution to journal › Article › peer-review

71 Scopus Citations

Abstract

As the development of kesterite solar cells accelerates, the bottlenecks in device performance need to be identified and ways for their circumvention defined and developed. In this work, we use 2-dimensional (2D) numerical simulations to explore possible reasons for low open-circuit voltage (V_oc) in Cu₂(Zn,Sn)Se₄ (CZTSe) solar cells. High defect density in the CZTSe absorber and at the CZTSe/CdS interface can be significant reasons for V_oc deficit, but they do not explain all of the losses observed experimentally. Local deviation from stoichiometry could create secondary phases with a lower band gap compared to the absorber. These secondary phases can be severely harmful to V_oc if located in the vicinity of the heterointerface and along the grain boundaries.

Original language	American English
Pages (from-to)	119-125
Number of pages	7
Journal	Solar Energy Materials and Solar Cells
Volume	133
DOIs	https://doi.org/10.1016/j.solmat.2014.10.042 https://doi.org/10.1016/j.solmat.2014.10.042
State	Published - 2015

Bibliographical note

Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.

NREL Publication Number

NREL/JA-5J00-60728

Keywords

CZTSe solar cells
Device performance
Numerical simulations

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title = "Impact of Bulk Properties and Local Secondary Phases on the Cu2(Zn,Sn)Se4 Solar Cells Open-Circuit Voltage",

abstract = "As the development of kesterite solar cells accelerates, the bottlenecks in device performance need to be identified and ways for their circumvention defined and developed. In this work, we use 2-dimensional (2D) numerical simulations to explore possible reasons for low open-circuit voltage (Voc) in Cu2(Zn,Sn)Se4 (CZTSe) solar cells. High defect density in the CZTSe absorber and at the CZTSe/CdS interface can be significant reasons for Voc deficit, but they do not explain all of the losses observed experimentally. Local deviation from stoichiometry could create secondary phases with a lower band gap compared to the absorber. These secondary phases can be severely harmful to Voc if located in the vicinity of the heterointerface and along the grain boundaries.",

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T1 - Impact of Bulk Properties and Local Secondary Phases on the Cu2(Zn,Sn)Se4 Solar Cells Open-Circuit Voltage

AU - Kanevce, Ana

AU - Repins, Ingrid

AU - Wei, Suhuai

PY - 2015

Y1 - 2015

N2 - As the development of kesterite solar cells accelerates, the bottlenecks in device performance need to be identified and ways for their circumvention defined and developed. In this work, we use 2-dimensional (2D) numerical simulations to explore possible reasons for low open-circuit voltage (Voc) in Cu2(Zn,Sn)Se4 (CZTSe) solar cells. High defect density in the CZTSe absorber and at the CZTSe/CdS interface can be significant reasons for Voc deficit, but they do not explain all of the losses observed experimentally. Local deviation from stoichiometry could create secondary phases with a lower band gap compared to the absorber. These secondary phases can be severely harmful to Voc if located in the vicinity of the heterointerface and along the grain boundaries.

AB - As the development of kesterite solar cells accelerates, the bottlenecks in device performance need to be identified and ways for their circumvention defined and developed. In this work, we use 2-dimensional (2D) numerical simulations to explore possible reasons for low open-circuit voltage (Voc) in Cu2(Zn,Sn)Se4 (CZTSe) solar cells. High defect density in the CZTSe absorber and at the CZTSe/CdS interface can be significant reasons for Voc deficit, but they do not explain all of the losses observed experimentally. Local deviation from stoichiometry could create secondary phases with a lower band gap compared to the absorber. These secondary phases can be severely harmful to Voc if located in the vicinity of the heterointerface and along the grain boundaries.

KW - CZTSe solar cells

KW - Device performance

KW - Numerical simulations

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DO - 10.1016/j.solmat.2014.10.042

M3 - Article

AN - SCOPUS:84914101852

SN - 0927-0248

VL - 133

SP - 119

EP - 125

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Impact of Bulk Properties and Local Secondary Phases on the Cu2(Zn,Sn)Se4 Solar Cells Open-Circuit Voltage

Abstract

Bibliographical note

NREL Publication Number

Keywords

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