Impact of Dislocations on Minority Carrier Electron and Hole Lifetimes in GaAs Grown on Metamorphic SiGe Substrates

C. L. Andre, J. J. Boeckl, D. M. Wilt, A. J. Pitera, M. L. Lee, E. A. Fitzgerald, B. M. Keyes, S. A. Ringel

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Abstract

The impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates was studied using time resolved threading dislocation densities (TDD). The electron lifetimes for homoepitaxial GaAs and GaAs grown on SiGe with a dopant concentration of 2x10 17cm -3 were presented. The electron lifetime measured on SiGe was found to be substantially lower than the previously measured minority carrier hole lifetime of ∼10 ns. The study showed that the reduced lifetime for electrons was a result of their higher mobility, which yielded an increased sensitivity to the presence of dislocations in GaAs grown on metamorphic buffers.

Original languageAmerican English
Pages (from-to)3447-3449
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number18
DOIs
StatePublished - 2004

NREL Publication Number

  • NREL/JA-520-36433

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