Impact of Dislocations on Minority Carrier Electron and Hole Lifetimes in GaAs Grown on Metamorphic SiGe Substrates

C. L. Andre; J. J. Boeckl; D. M. Wilt; A. J. Pitera; M. L. Lee; E. A. Fitzgerald; B. M. Keyes; S. A. Ringel

doi:10.1063/1.1736318

Impact of Dislocations on Minority Carrier Electron and Hole Lifetimes in GaAs Grown on Metamorphic SiGe Substrates

C. L. Andre, J. J. Boeckl, D. M. Wilt, A. J. Pitera, M. L. Lee, E. A. Fitzgerald, B. M. Keyes, S. A. Ringel

Materials, Chemical, and Computational Science Research Operations

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Abstract

The impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates was studied using time resolved threading dislocation densities (TDD). The electron lifetimes for homoepitaxial GaAs and GaAs grown on SiGe with a dopant concentration of 2x10 ¹⁷cm ^-3 were presented. The electron lifetime measured on SiGe was found to be substantially lower than the previously measured minority carrier hole lifetime of ∼10 ns. The study showed that the reduced lifetime for electrons was a result of their higher mobility, which yielded an increased sensitivity to the presence of dislocations in GaAs grown on metamorphic buffers.

Original language	American English
Pages (from-to)	3447-3449
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	18
DOIs	https://doi.org/10.1063/1.1736318 https://doi.org/10.1063/1.1736318
State	Published - 2004

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NREL/JA-520-36433

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title = "Impact of Dislocations on Minority Carrier Electron and Hole Lifetimes in GaAs Grown on Metamorphic SiGe Substrates",

abstract = "The impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates was studied using time resolved threading dislocation densities (TDD). The electron lifetimes for homoepitaxial GaAs and GaAs grown on SiGe with a dopant concentration of 2x10 17cm -3 were presented. The electron lifetime measured on SiGe was found to be substantially lower than the previously measured minority carrier hole lifetime of ∼10 ns. The study showed that the reduced lifetime for electrons was a result of their higher mobility, which yielded an increased sensitivity to the presence of dislocations in GaAs grown on metamorphic buffers.",

author = "Andre, {C. L.} and Boeckl, {J. J.} and Wilt, {D. M.} and Pitera, {A. J.} and Lee, {M. L.} and Fitzgerald, {E. A.} and Keyes, {B. M.} and Ringel, {S. A.}",

year = "2004",

doi = "10.1063/1.1736318",

language = "American English",

volume = "84",

pages = "3447--3449",

journal = "Applied Physics Letters",

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T1 - Impact of Dislocations on Minority Carrier Electron and Hole Lifetimes in GaAs Grown on Metamorphic SiGe Substrates

AU - Andre, C. L.

AU - Boeckl, J. J.

AU - Wilt, D. M.

AU - Pitera, A. J.

AU - Lee, M. L.

AU - Fitzgerald, E. A.

AU - Keyes, B. M.

AU - Ringel, S. A.

PY - 2004

Y1 - 2004

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AB - The impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates was studied using time resolved threading dislocation densities (TDD). The electron lifetimes for homoepitaxial GaAs and GaAs grown on SiGe with a dopant concentration of 2x10 17cm -3 were presented. The electron lifetime measured on SiGe was found to be substantially lower than the previously measured minority carrier hole lifetime of ∼10 ns. The study showed that the reduced lifetime for electrons was a result of their higher mobility, which yielded an increased sensitivity to the presence of dislocations in GaAs grown on metamorphic buffers.

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U2 - 10.1063/1.1736318

DO - 10.1063/1.1736318

M3 - Article

AN - SCOPUS:2542434182

SN - 0003-6951

VL - 84

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EP - 3449

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Impact of Dislocations on Minority Carrier Electron and Hole Lifetimes in GaAs Grown on Metamorphic SiGe Substrates

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