Abstract
Studies have been carried out on a-Si:H materials and corresponding solar cells fabricated with and without hydrogen dilution of silane by rf PECVD. The effect of hydrogen dilution on the growth kinetics and microstructures and their dependence on the substrate temperature have been studied. Hydrogen diluted a-Si:H materials and solar cells exhibit improved properties and higher stability tolight induced changes. Distinct differences are found in the electron mobility lifetime (..mu...tau..) products and subgap absorption over a wide range of generation rates. Striking differences are also found in the kinetics of light induced degradation in both the materials and their corresponding solar cells. Direct correlations are presented between the degradation kinetics ofp(a-Si:H)/i(a-Si:H)/n(..mu..c-Si) solar cells and those of thin film materials constituting the i-layers.
| Original language | American English |
|---|---|
| Pages | 747-752 |
| Number of pages | 6 |
| State | Published - 1997 |
| Event | Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium - San Francisco, California Duration: 31 Mar 1997 → 4 Apr 1997 |
Conference
| Conference | Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium |
|---|---|
| City | San Francisco, California |
| Period | 31/03/97 → 4/04/97 |
Bibliographical note
Work performed by Pennsylvania State University, University Park, PennsylvaniaNREL Publication Number
- NREL/CP-520-24564