Abstract
Photons with energies below the photovoltaic (PV) absorber band gap do not generate current and adversely impact performance when absorbed in other solar cell components to produce heat. Here we incorporate infrared (IR) optical response in simulations for understanding thermal losses. Spectroscopic ellipsometry is used to measure Al-Si interface optical properties in Si PV. Reflectance of an Si module has been analyzed to account for encapsulant and Al-Si interface contributions. IR extended quantum efficiency simulations calculate efficiency gains / losses arising from variations in current generated and total reflectance as functions of transparent front contact material in thin film CdTe PV.
| Original language | American English |
|---|---|
| Pages | 2771-2775 |
| Number of pages | 5 |
| DOIs | |
| State | Published - 2018 |
| Event | 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C. Duration: 25 Jun 2017 → 30 Jun 2017 |
Conference
| Conference | 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) |
|---|---|
| City | Washington, D.C. |
| Period | 25/06/17 → 30/06/17 |
NREL Publication Number
- NREL/CP-5K00-68660
Keywords
- Al-Si interface
- CdTe
- optical properties
- ray tracing
- silicon solar cell
- transparent conducting oxide