Impact of Zn1-xMnxO on Cu(In,Ga)Se2 Thin-Film Solar Cells

Xiaonan Li, Ana Kanevce, Jian V. Li, Ingrid Repins, Brian Egaas, Rommel Noufi

Research output: Contribution to conferencePaperpeer-review

4 Scopus Citations


In this work, we studied the impact of using Zn1-xMg xO to replace the intrinsic ZnO in CIGS solar cells. The effect of Mg content and layer thickness of the Zn1-xMgxO on device formation was investigated. We found that the amount of Mg in the Zn 1-xMgxO layer and the layer thickness significantly alter the cell properties. Device characterization indicated that the impact of the Mg content is not limited to the front-window layer, but also extends to underneath the CIGS layer. The numerical simulation nicely explains the relationship between various front-window layers and device performance. Our observation indicates that properties of the front-window layer may be important to junction formation in CIGS devices. Any changes to this part of the device could seriously alter device performance.

Original languageAmerican English
Number of pages4
StatePublished - 2009
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: 7 Jun 200912 Jun 2009


Conference2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/TerritoryUnited States
CityPhiladelphia, PA

NREL Publication Number

  • NREL/CP-520-46112


  • CIGS solar cell
  • Conduction-band offset
  • ZnMgO


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