Impact of Zn1-xMnxO on Cu(In,Ga)Se2 Thin-Film Solar Cells

Xiaonan Li, Ana Kanevce, Jian V. Li, Ingrid Repins, Brian Egaas, Rommel Noufi

Research output: Contribution to conferencePaperpeer-review

4 Scopus Citations

Abstract

In this work, we studied the impact of using Zn1-xMg xO to replace the intrinsic ZnO in CIGS solar cells. The effect of Mg content and layer thickness of the Zn1-xMgxO on device formation was investigated. We found that the amount of Mg in the Zn 1-xMgxO layer and the layer thickness significantly alter the cell properties. Device characterization indicated that the impact of the Mg content is not limited to the front-window layer, but also extends to underneath the CIGS layer. The numerical simulation nicely explains the relationship between various front-window layers and device performance. Our observation indicates that properties of the front-window layer may be important to junction formation in CIGS devices. Any changes to this part of the device could seriously alter device performance.

Original languageAmerican English
Pages305-308
Number of pages4
DOIs
StatePublished - 2009
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: 7 Jun 200912 Jun 2009

Conference

Conference2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/TerritoryUnited States
CityPhiladelphia, PA
Period7/06/0912/06/09

NREL Publication Number

  • NREL/CP-520-46112

Keywords

  • CIGS solar cell
  • Conduction-band offset
  • ZnMgO

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