Implementation of Tunneling Passivated Contacts into Industrially Relevant n-Cz Si Solar Cells

William Nemeth, Vincenzo Lasalvia, Matthew R. Page, Emily L. Warren, Arrelaine Dameron, Andrew G. Norman, Benjamin G. Lee, David L. Young, Paul Stradins

Research output: Contribution to conferencePaperpeer-review

21 Scopus Citations


We identify bottlenecks, and propose solutions, to implement a B-diffused front emitter and a backside pc-Si/SiO2 pasivated tunneling contact into high efficiency n-Cz Si cells in an industrially relevant way. We apply an O-precipitate dissolution treatment to make n-Cz wafers immune to bulk lifetime process degradation, enabling robust, passivated B front emitters with J0 < 20fA/cm2. Adding ultralow recombination n+ pc-Si/SiO2 back contacts enables pre-metallized cells with iVoc=720 mV and J0=8.6 fA/cm2. However, metallization significantly degrades performance of these contacts due to pinholes and possibly, grain boundary diffusion of primary metal and source contaminates such as Cu. An intermediate, doped a-Si:H capping layer is found to significantly block the harmful metal penetration into pc-Si.

Original languageAmerican English
Number of pages3
StatePublished - 14 Dec 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015


Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NREL Publication Number

  • NREL/CP-5J00-64427


  • oxygen precipitates
  • passivated contacts
  • Tabula Rasa


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